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Performance enhancement of UV quantum well light emitting diode through structure optimization

机译：通过结构优化的UV量子阱发光二极管性能提高

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摘要

In this paper, an extensive study is carried out via theoretical simulation to determine the electrical and optical characteristics of AlGaN based multi-quantum well near-ultra violet light emitting diodes (MQW-UV-LED) for the emission wavelength of 353nm. The structure and characteristics of epitaxial layers used in UV-LEDs play a significant role in the performance of the device. We have studied dependence of device output characteristics on its layer structure and optimized the structure properties to improve the performance of the device. During the optimization process, thickness of quantum well layers, thickness of barrier layers, composition of electron blocking layer (EBL) and composition of barrier layer have been changed to their optimal values. In order to calculate the wavefunction, carrier densities, and discrete energy levels within the quantum well, a 6x6 Kohn-Luttinger Hamiltonian has been solved. A final structure with optimized values has been proposed in the end. The optimal values for quantum well thickness and barrier thickness are found to be 3.5nm and 6nm respectively. Optimum values from aluminium concentration in EBL and barriers are found to be 40% and 22% respectively. The output characteristics of the final device have been simulated and results are demonstrated. The performance of final device for varying temperature have also been simulated and displayed. The results achieved n this work may be beneficial to the entire opto-electronics community.
机译：在本文中，通过理论模拟进行了广泛的研究，以确定用于发射波长为353nm的AlGaN的多量子阱附近超紫光发光二极管（MQW-UV-LED）的电气和光学特性。 UV-LED中使用的外延层的结构和特性在设备的性能下起着重要作用。我们研究了器件输出特性对其层结构的依赖性，并优化了结构性能以提高器件的性能。在优化过程中，量子阱层的厚度，阻挡层的厚度，电子阻挡层（EBL）的组成以及阻挡层的组成已经改变为它们的最佳值。为了计算量子阱内的波空，载波密度和离散能级，已经解决了6x6 Kohn-Luttinger Hamiltonian。最后提出了具有优化值的最终结构。量子阱厚度和屏障厚度的最佳值分别为3.5nm和6nm。 EBL和屏障中铝浓度的最佳值分别为40％和22％。已经模拟了最终装置的输出特性并进行了结果。还模拟并显示了最终装置的变化温度的性能。实现了这项工作的结果可能对整个光电子群落有益。

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