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Performance enhancement of UV quantum well light emitting diode through structure optimization

机译：通过结构优化提高紫外量子阱发光二极管的性能

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摘要

In this paper, an extensive study is carried out via theoretical simulation to determine the electrical and optical characteristics of AlGaN based multi-quantum well near-ultra violet light emitting diodes (MQW-UV-LED) for the emission wavelength of 353nm. The structure and characteristics of epitaxial layers used in UV-LEDs play a significant role in the performance of the device. We have studied dependence of device output characteristics on its layer structure and optimized the structure properties to improve the performance of the device. During the optimization process, thickness of quantum well layers, thickness of barrier layers, composition of electron blocking layer (EBL) and composition of barrier layer have been changed to their optimal values. In order to calculate the wavefunction, carrier densities, and discrete energy levels within the quantum well, a 6x6 Kohn-Luttinger Hamiltonian has been solved. A final structure with optimized values has been proposed in the end. The optimal values for quantum well thickness and barrier thickness are found to be 3.5nm and 6nm respectively. Optimum values from aluminium concentration in EBL and barriers are found to be 40% and 22% respectively. The output characteristics of the final device have been simulated and results are demonstrated. The performance of final device for varying temperature have also been simulated and displayed. The results achieved n this work may be beneficial to the entire opto-electronics community.
机译：在本文中，通过理论模拟进行了广泛的研究，以确定发射波长为353nm的基于AlGaN的多量子阱近紫外光发光二极管（MQW-UV-LED）的电学和光学特性。 UV-LED中使用的外延层的结构和特性在器件的性能中起着重要作用。我们研究了器件输出特性对其层结构的依赖性，并优化了结构特性以提高器件性能。在优化过程中，量子阱层的厚度，势垒层的厚度，电子阻挡层（EBL）的组成和势垒层的组成已更改为最佳值。为了计算量子阱中的波函数，载流子密度和离散能级，已经解决了6x6 Kohn-Luttinger哈密顿量。最后提出了具有最佳值的最终结构。量子阱厚度和势垒厚度的最佳值分别为3.5nm和6nm。从EBL和势垒中的铝浓度得出的最佳值分别为40％和22％。模拟了最终设备的输出特性，并演示了结果。最终设备在不同温度下的性能也已模拟并显示出来。在这项工作中取得的成果可能对整个光电界有益。

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  • 来源
    《Optical and quantum electronics》 |2019年第7期|243.1-243.23|共23页
  • 作者

    Ahmad Shameem; Raushan M. A.; Gupta Himanshu; Kattayat Sandhya; Kumar Shalendra; Dalela Saurabh; Alvi P. A.; Siddiqui M. J.;

  • 作者单位

    Aligarh Muslim Univ, Dept Elect Engn Fo Engn & Technol, Aligarh 202002, UP, India;

    Aligarh Muslim Univ, Dept Elect Engn Fo Engn & Technol, Aligarh 202002, UP, India;

    Banasthali Vidyapith, Dept Phys, Banasthali 304022, Rajasthan, India;

    Higher Coll Technol, Abu Dhabi, U Arab Emirates;

    Amity Univ Haryana, Amity Sch Appl Sci, Dept Appl Phys, Elect Mat & Nanomagnetism Lab, Gurgaon 122413, India;

    Univ Kota, Dept Pure & Appl Phys, Kota, Rajasthan, India;

    Banasthali Vidyapith, Dept Phys, Banasthali 304022, Rajasthan, India;

    Aligarh Muslim Univ, Dept Elect Engn Fo Engn & Technol, Aligarh 202002, UP, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    UV-LED; Efficiency droop; Phosphor-less LEDs; EBL; LED simulations; GaN LED;

    机译：UV-LED;效率下垂;少量磷;EBL;LED模拟;GaN LED;

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