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Investigation the optical band gap of self-assembled monolayer of tin selenide synthesized by chemical solution deposition

机译：化学溶液沉积合成的自组装单层锡硒酯的光带隙

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In this study, the fabrication and characterization of the thin layer of SnSe self-assembled were investigated by control of the preparation parameters. SnSe binary nanoparticles semiconductor were prepared using chemical solution deposition technique. The deposition time and temperature and the solution concentration that govern the evolution of the configuration films and optical band gap in chemical deposition processes was explored. We benefited from Rutherford Backscattering Spectrometry with 2MeV He-4 ions to determine the depth profile of the elements in tin selenide. UV-visible spectroscopy was used for energy band gap determination. Also, the nanostructured and the morphologies of the thin films were analyzed by scanning electron microscopy. We were able to achieve a broad optical band gap ranging from 5.82 to 3.06eV of SnSe thin films appropriate for solar cell and photovoltaic applications.
机译：在该研究中，通过控制制备参数研究了自组装的薄层的制造和表征。使用化学溶液沉积技术制备SNSE二元纳米粒子半导体。探讨了控制化学沉积过程中的构造薄膜和光带间隙的进化的沉积时间和温度和溶液浓度。我们受益于卢瑟福反向散射光谱法，用2mev He-4离子测定锡硒化锡中元素的深度曲线。 UV可见光光谱用于能带隙测定。此外，通过扫描电子显微镜分析纳米结构和薄膜的形态。我们能够实现适用于太阳能电池和光伏应用的SNSE薄膜的5.82至3.06EV的宽光带隙。

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