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首页> 外文期刊>Optical and quantum electronics >The performance analysis of the GaAs/c-InN solar photovoltaic cell hetero-structure: temperature dependence
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The performance analysis of the GaAs/c-InN solar photovoltaic cell hetero-structure: temperature dependence

机译：GaAs / C-Inn太阳能光伏电池异质结构的性能分析：温度依赖性

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摘要

The numerical analysis of the GaAs/c-InN solar photovoltaic cell (SPC) hetero-structure has been investigated by means of an analytical solar cell model in the temperature range 200-400 K to determine and develop solar cell performance. Temperature-band gap dependency for GaAs and InN materials has been determined by Varshni and Passler models. Then, the performance of the SPC was obtained by basic electrical parameters such as short circuit current density, open circuit voltage and conversion efficiency. For the proposed GaAs/c-InN SPC, theoretical calculations were predicted optimum electrical parameters, J_(SC), V_(OC) and η were 30.47 mA/cm~2, 1.60 V and 30.55% at room temperature under AM1.5G spectrum, respectively. Additionally, it was observed that with the increase in the cell temperature, J_(SC) increases slightly due to the energy band gap narrowing whereas V_(OC) decreases, thereby leading to the decrease in the efficiency of SPC. This theoretical study can be helpful in supporting the developed of high efficiency new generation solar cell by studying the role of different hetero-structure materials.
机译：通过200-400K温度范围的分析太阳能电池模型研究了GaAs / C-Inn太阳能光伏电池（SPC）异质结构的数值分析，以确定和开发太阳能电池性能。 GaAs和Inn材料的温度带隙依赖性由Varshni和Passler型号决定。然后，通过诸如短路电流密度，开路电压和转换效率的基本电参数来获得SPC的性能。对于所提出的GaAs / C-Inn SPC，预测理论计算是预测的最佳电气参数，J_（SC），V_（OC）和η在室温下在AM1.5G谱下在室温下为30.47mA / cm〜2,1.60 V和30.55％ ， 分别。另外，观察到，随着细胞温度的增加，由于能量带隙变窄而v_（oc）降低，J_（SC）略微增加，而V_（OC）降低，从而降低了SPC效率的降低。本理论研究通过研究不同杂结构材料的作用，可以有助于支持高效新一代太阳能电池的开发。

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