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首页> 外文期刊>Optical and quantum electronics >Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As_(50)Se_(50) thin films
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Investigation of amorphous-crystalline transformation induced optical and electronic properties change in annealed As_(50)Se_(50) thin films

机译：无定形结晶转化诱导的光学和电子性质的研究变化退火AS_（50）SE_（50）薄膜

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The present work reports the amorphous-crystalline phase transformation in thermally evaporated As_(50)Se_(50) thin films upon annealing at below T_g (423 K) and above T_g (523 K). The structural transition was probed by XRD, Raman and X-ray photoelec-tron spectroscopy. The composition and surface morphology were probed by EDS and FESEM techniques. The transmittance and reflectance spectra over the wavelength range 500 nm-1200 nm were used to deduce the optical parameters. The various optical parameters of the as-prepared and annealed As_(50)Se_(50) thin films were estimated and discussed in terms of density of defect states and disorders. The indirect optical energy gap decreased for the 423 K annealed film and abruptly increased for 523 K annealed film as compared to the as-prepared film. The Swanepoel envelope method, WDD model, and Sellemeire postulates were employed for the analysis of refractive index, static refractive index, oscillator energy, dispersion energy, oscillator wavelength and dielectric constant. The changes in the linear and nonlinear properties showed opposite behavior for the two annealed films. The non-linear refractive index and 3rd order susceptibility were found to be increased for 423 K annealed film and decreased for the 523 K annealed film. The optical as well as the electrical conductivity changed with annealing and the electrical susceptibility increased for 523 K annealed film.The tunable optical properties can be applied for several optoelectronic applications.
机译：当前工作在在低于T_G（423k）和高于T_g（523k）时，在退火时，在热蒸发的AS_（50）SE_（50）SE_（50）薄膜中报告无定形结晶相变。通过XRD，拉曼和X射线PhotoElecec-Tron光谱法探测了结构转变。通过EDS和FESEM技术探测组合物和表面形态。在500nm-1200nm上使用波长范围的透射率和反射光谱来推导光学参数。在缺陷状态和疾病的密度方面估计并讨论了制备和退火AS_（50）SE_（50）SE_（50）薄膜的各种光学参数。与制备的薄膜相比，423K退火膜的间接光学能量间隙降低，突然增加523k退火膜。用于分析折射率，静态折射率，振荡器能量，色散能量，振荡器波长和介电常数的Skepoel包络方法，WDD模型和销售假设。线性和非线性性质的变化显示出两个退火薄膜的相反行为。发现非线性折射率和第3顺序易感性增加423k退火薄膜并降低523K退火膜。光学以及通过退火改变的光学和电导率和电导率的变化增加，对于523k退火薄膜而增加。可调谐光学性能可用于多个光电应用。

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