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首页> 外文期刊>Optical and quantum electronics >Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes
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Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes

机译：静压压力对ingAn / GaN多量子阱发光二极管辐射电流密度的影响

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摘要

In this paper, a numerical model is used to analyze photovoltaic parameters according to the electronic properties of InGaN/GaN multiple-quantum-well light emitting diode (MQWLED) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of InGaN/GaN MQWLED and the hole eigenstates are calculated via a 6 × 6 k.p method under applied hydrostatic pressure. All symmetry-allowed transitions up to the fifth subband of the quantum wells (multi-subband model) are considered. The linewidth due to the carrier-carrier and carrier-longitudinal optical phonon scattering are also considered. A change in pressure up to 10 Gpa increases the intraband scattering time up to 38 fs for heavy holes and 40 fs for light holes, raises the height of the Lorentz function, reduces the excitonic binding energy, and decreases the spontaneous emission rate up to 1.12 × 10~(26)cm~(-3)s~(-1)eV~(-1) and radiative current density up to 75 A/cm~2. The multi-subband model has a positive effect on the radiative recombination rate.
机译：在本文中，数值模型用于根据静水压力下的InGaN / GaN多量子阱发光二极管（MQWLED）的电子性质来分析光伏参数。已经使用有限差分技术来获取能量特征值，并通过施加静压压力的6×6k.p方法计算IngaN / GaN mqwled的相应特征函数和孔特征。允许所有对称允许的转换到量子阱（多子带模型）的第五个子带。还考虑了由于载波载波和载波纵向光学声子散射而导致的线宽。高达10GPa的压力变化会使内部散射时间高达38 f，为重型孔和40 fs进行光孔，提高洛伦兹函数的高度，降低了激发力的结合能量，并降低了高达1.12的自发发射率×10〜（26）cm〜（-3）S〜（-1）eV〜（-1）和辐射电流密度高达75a / cm〜2。多子带模型对辐射重组率具有积极影响。

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