Chemical beam epitaxy of 1.55-μm separate confinement heterostructure multiple quantum well laser diodes

Jean-Francois R. Carlin; Jean-Michel Sallese; Marc P. de Fays; Patrick J. Grunberg; Alok P. Rudra; Jean-Marc Bonard; Marc Ilegems; Jean-Daniel Ganiere

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Chemical beam epitaxy of 1.55-μm separate confinement heterostructure multiple quantum well laser diodes

机译：1.55μm分离约束异质结构多量子阱激光二极管的化学束外延

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We report on the realization of InGaAs-InGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron microscopy, electron-beam-induced current, and x-ray diffraction. Threshold current densities as low as 450 A/cm~2 are obtained on lasers with five strained InGaAs quantum wells, along with internal quantum efficiencies of 90% and optical losses of 5 cm~(-1).

机译：我们报告了通过化学束外延生长的InGaAs-InGaAsP分离约束异质结构多量子阱激光器的实现。我们讨论了关键的生长参数，并通过二次离子质谱，透射电子显微镜，电子束感应电流和X射线衍射表征。具有五个应变InGaAs量子阱的激光器的阈值电流密度低至450 A / cm〜2，内部量子效率为90％，光损耗为5 cm〜（-1）。

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来源
《Optical engineering》 |1995年第7期|p.1993-1999|共7页
作者
Jean-Francois R. Carlin; Jean-Michel Sallese; Marc P. de Fays; Patrick J. Grunberg; Alok P. Rudra; Jean-Marc Bonard; Marc Ilegems; Jean-Daniel Ganiere;
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作者单位

Ecole Polytechnique Federate de Lausanne Institut de Micro- et Optoelectronique CH-1015 Lausanne, Switzerland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类光学仪器;
关键词
GaInAsP; InP; quantum well; laser; transmission electron microscopy; electron-beam-induced current; chemical beam epitaxy;

机译：GaInAsP InP量子阱激光透射电子显微镜电子束感应电流化学束外延;

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专利

1. Design and fabrication of low-threshold 1.55-/spl mu/m graded-index separate-confinement heterostructure strained InGaAsP single-quantum-well laser diodes [J] . Yamamoto N., Yokoyama K. IEEE Journal of Quantum Electronics . 1997,第7期

机译：低阈值1.55 / spl mu / m梯度折射率分离约束异质结构应变InGaAsP单量子阱激光二极管的设计与制造
2. Molecular beam epitaxy-grown separate confinement buried heterostructure PbEuSeTe-PbTe diode lasers [J] . Feit Z., Kostyk D. IEEE Photonics Technology Letters . 1995,第12期

机译：分子束外延生长的单独禁闭掩埋异质结构PbEuSeTe-PbTe二极管激光器
3. 1.5 mu m GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRIN-SCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD) [J] . Kasukawa A., Murgatroyd I.J. Electronics Letters . 1989,第10期

机译：通过金属有机化学气相沉积（MOCVD）生长的1.5μm的GaInAs / GaInAsP梯度折射率分离禁区异质结构多量子阱（GRIN-SCH-MQW）激光二极管
4. 1.5/spl mu/ InGaAs/InGaAsP separate confinement multi-quantum well lasers grown by chemical beam epitaxy [C] . Tsang, W.T., Wu, . 1990

机译：通过化学束外延生长的1.5 / spl mu / InGaAs / InGaAsP分离禁闭多量子阱激光器
5. Characterization of strained quantum well tunneling injection and separate confinement heterostructure lasers. [D] . Yoon, Howard. 1996

机译：应变量子阱隧穿注入和分离禁区异质结构激光器的表征。
6. Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy [O] . Kai Ding, Vitaliy Avrutin, Natalia Izioumskaia, 2018

机译：等离子体辅助分子束外延生长的Zn极性BeMgZnO / ZnO异质结构上肖特基二极管的制备
7. AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers [O] . Sergi Cuesta, Yoann Curé, Fabrice Donatini, 2021

机译：AlGaN / GaN不对称分级索引独立的限制异性结构，专为电子束泵浦UV激光器而设计
8. AlInGaAs/AlGaAs Separate-Confinement Heterostructure Strained Single Quantum WellDiode Lasers Grown by Organometallic Vapor Phase Epitaxy [R] . Wang, C. A., Walpole, J. N., Missaggia, L. J., 1991

机译：有机金属气相外延生长的alInGaas / alGaas分离限制异质结构应变单量子阱二极管激光器

Chemical beam epitaxy of 1.55-μm separate confinement heterostructure multiple quantum well laser diodes

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