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首页> 外文期刊>Optical engineering >High-performance binary blazed grating coupler used in silicon-based hybrid photodetector integration
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High-performance binary blazed grating coupler used in silicon-based hybrid photodetector integration

机译：基于硅的混合光电探测器集成中使用的高性能二进制闪耀光栅耦合器

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摘要

An efficient and high-performance binary blazed grating coupler was designed based on silicon-on-insulator (SOI) used for silicon-based hybrid photodetector integration in an arrayed waveguide grating demodulation integrated microsystem. A relatively high coupling efficiency was obtained to optimize mode matching by the finite-difference time-domain method by choosing appropriate grating parameters, including period, etching depth, and fill factor. Coupling efficiency output at 1550 nm for the TE mode reached 68%. This value was ＞60% in the wavelength range of 1450 to 1600 nm, specifically 71.4% around 1478 nm. An InP/InGaAs photodetector and SOI wafer were integrated by using benzocyclobutene (BCB) bonding. When the thickness of the BCB bonding layer was 440 nm, power absorption efficiency at 1550 nm for the TE mode reached 78.5%, whereas efficiency reached ~81.8% around 1475 nm.
机译：基于绝缘体上硅（SOI）设计了一种高效，高性能的二元闪耀光栅耦合器，用于阵列波导光栅解调集成微系统中的基于硅的混合光电探测器集成。通过选择适当的光栅参数，包括周期，蚀刻深度和填充因子，可以通过有限差分时域方法获得相对较高的耦合效率，以优化模式匹配。 TE模式在1550 nm处的耦合效率输出达到68％。在1450至1600 nm的波长范围内，该值> 60％，特别是在1478 nm附近的71.4％。通过使用苯并环丁烯（BCB）键将InP / InGaAs光电探测器和SOI晶片集成在一起。当BCB粘结层的厚度为440 nm时，TE模式在1550 nm处的功率吸收效率达到78.5％，而在1475 nm左右效率达到〜81.8％。

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  • 来源
    《Optical engineering》 |2014年第9期|097106.1-097106.6|共6页
  • 作者

    Hongqiang Li; Yu Liu; Chunjiao Miao; Meiling Zhang; Wenqian Zhou; Chunxiao Tang; Enbang Li;

  • 作者单位

    Tianjin Polytechnic University, School of Electronics and Information Engineering, Tianjin 300387, China;

    Tianjin Polytechnic University, School of Electronics and Information Engineering, Tianjin 300387, China;

    Beijing Jiaotong University, School of Electronics and Information Engineering, Beijing 100044, China;

    Tianjin Polytechnic University, School of Electronics and Information Engineering, Tianjin 300387, China;

    Tianjin Polytechnic University, School of Electronics and Information Engineering, Tianjin 300387, China;

    Tianjin Polytechnic University, School of Electronics and Information Engineering, Tianjin 300387, China;

    University of Wollongong, School of Physics, Faculty of Engineering and Information Sciences, Wollongong, NSW 2522, Australia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    silicon-on-insulator; binary blazed grating coupler; silicon-based hybrid photodetector integration;

    机译：绝缘体上硅二进制闪耀光栅耦合器;基于硅的混合光电探测器集成;

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