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首页> 外文期刊>Optical engineering >Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition
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Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition

机译：减少射频离子束溅射沉积制备的光学氮化硅薄膜中的残余应力

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摘要

In this study, we investigate the deposition of SiN_x thin films by radio-frequency ion-beam sputtering deposition. By varying the amount of N_2 and Ar flow and ion-beam voltage, we can obtain an optimal refractive index of 2.07, extinction coefficient (at the central wavelength of 500 nm) of 3.44 × 10~(-4), and deposition rate of 0.166 nm/s. The x-ray photoelectron spectra of SiN_x films deposited with different beam voltages are also analyzed. The residual stress of the SiN_v films varied from -1.38 to -2.17 GPa, depending on the beam voltage. The residual stress is reduced from -2.17 to -1.40 GPa when the film is divided into four layers with three interfaces.
机译：在这项研究中，我们研究了通过射频离子束溅射沉积来沉积SiN_x薄膜。通过改变N_2和Ar的流量和离子束电压，我们可以获得最佳折射率2.07，消光系数（中心波长500 nm）为3.44×10〜（-4）以及沉积速率为0.166 nm /秒。还分析了以不同束电压沉积的SiN_x薄膜的X射线光电子能谱。 SiN_v膜的残余应力在-1.38至-2.17 GPa之间变化，具体取决于射束电压。当将膜分为具有三个界面的四层时，残余应力从-2.17 GPa降低到-1.40 GPa。

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  • 来源
    《Optical engineering》 |2010年第6期|p.063802.1-063802.7|共7页
  • 作者

    Cheng-Chung Lee; Kun-Hsien Lee; Chien-Jen Tang; Cheng-Chung Jaing; Hsi-Chao Chen;

  • 作者单位

    National Central University Department of Optics and Photonics Thin Film Technology Center Chung-Li 32001 Taiwan;

    rnNational Central University Department of Optics and Photonics Thin Film Technology Center Chung-Li 32001 Taiwan;

    rnMinghsin University of Science and Technology Department of Optoelectronic System Engineering Optoelectronics Technology Research Center Hsin-Chu 304 Taiwan;

    rnMinghsin University of Science and Technology Department of Optoelectronic System Engineering Optoelectronics Technology Research Center Hsin-Chu 304 Taiwan;

    rnNational Yunlin University of Science and Technology Graduate School of Optoelectronics Yunlin 64002 Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    residual stress; SiN_x; radio-frequency ion-beam sputtering; deposition; optical properties; interface stress;

    机译：残余应力SiN_x;射频离子束溅射沉积光学性质界面应力;

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