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首页> 外文期刊>Optical Engineering >Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition
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Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition

机译:减少射频离子束溅射沉积制备的光学氮化硅薄膜中的残余应力

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摘要

In this study, we investigate the deposition of SiNx thin films by radio-frequency ion-beam sputtering deposition. By varying the amount of N2 and Ar flow and ion-beam voltage, we can obtain an optimal refractive index of 2.07, extinction coefficient (at the central wavelength of 500 nm) of 3.44×10−4, and deposition rate of 0.166 nm/s. The x-ray photoelectron spectra of SiNx films deposited with different beam voltages are also analyzed. The residual stress of the SiNx films varied from −1.38 to −2.17 GPa, depending on the beam voltage. The residual stress is reduced from −2.17 to −1.40 GPa when the film is divided into four layers with three interfaces.
机译:在这项研究中,我们研究了通过射频离子束溅射沉积来沉积SiNx薄膜。通过改变氮气和氩气的流量和离子束电压,我们可以获得最佳折射率2.07,消光系数(中心波长500 nm)为3.44×10-4和沉积速率为0.166 nm / s。还分析了以不同束电压沉积的SiNx薄膜的X射线光电子能谱。根据束电压,SiNx膜的残余应力在-1.38至-2.17 GPa之间变化。当将膜分为具有三个界面的四层时,残余应力从-2.17 GPa降低至-1.40GPa。

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