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首页> 外文期刊>Optical Materials >Effect of Ga content on luminescence and defects formation processes in Gd_3(Ga,Al)_5O_(12):Ce single crystals
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Effect of Ga content on luminescence and defects formation processes in Gd_3(Ga,Al)_5O_(12):Ce single crystals

机译：Ga含量对Gd_3（Ga，Al）_5O_（12）：Ce单晶发光和缺陷形成过程的影响

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摘要

Luminescence characteristics of Ce3+ - doped Gd3GaxAl5-xO12 single crystals with different Ga contents (x = 1, 2, 3, 4, 5) are studied in the 9-500 K temperature range. The spectra of the afterglow, photoluminescence, radioluminescence, and thermally stimulated luminescence (TSL) of each crystal coincide. The increase of the Ga content results in the high-energy shift of the spectra while the radioluminescence intensity at 9 K remains practically constant up to x = 4. No Ce3+ emission is observed in case of x = 5. The total TSL intensity drastically increases, reaches the maximum value around x = 2-3, and then decreases due to the thermal quenching of the Ce3+ emission. The TSL glow curve maxima are gradually shifting to lower temperatures, and the dependence of the maxima positions and the corresponding trap depths on the Ga content is close to linear. However, the activation energy of the TSL peaks creation under irradiation of the crystals in the 4f - 5d(1) absorption band of Ce3+ decreases drastically with the increasing Ga content (especially in the range of x = 1-2), and this dependence is found to be strongly nonlinear. Possible reasons of the nonlinearity are discussed. (C) 2017 Elsevier B.V. All rights reserved.
机译：在9-500 K的温度范围内研究了掺杂有不同Ga含量（x = 1、2、3、4、5）的Ce3 +掺杂Gd3GaxAl5-xO12单晶的发光特性。每个晶体的余辉，光致发光，放射致发光和热激发发光（TSL）的光谱重合。 Ga含量的增加导致光谱发生高能移动，而9 K时的放射发光强度在x = 4时几乎保持恒定。在x = 5的情况下未观察到Ce3 +发射。总TSL强度急剧增加。 ，在x = 2-3附近达到最大值，然后由于Ce3 +发射的热猝灭而降低。 TSL辉光曲线的最大值逐渐向较低温度移动，并且最大值位置和相应的陷阱深度对Ga含量的依赖性接近线性。但是，随着Ga含量的增加（尤其是在x = 1-2的范围内），在Ce3 +的4f-5d（1）吸收带中的晶体辐照下，TSL峰产生的活化能急剧下降。被发现是强烈非线性的。讨论了非线性的可能原因。 （C）2017 Elsevier B.V.保留所有权利。

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