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首页> 外文期刊>Optical Materials >Performance enhancement of diode-end-pumped quasi-three-level continuous-wave and passively Q-switched Nd:Gd_3Ga_5O_(12) lasers
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Performance enhancement of diode-end-pumped quasi-three-level continuous-wave and passively Q-switched Nd:Gd_3Ga_5O_(12) lasers

机译：二极管端泵浦准三级连续波和被动Q开关的性能增强：GD_3GA_5O_（12）激光器

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摘要

We present the results on diode-end-pumped quasi-three-level lasers in continuous-wave and passively Q -switched regimes using a weakly Nd3 thorn doped Gd3Ga5O12 (GGG) crystal as active medium. In continuous-wave case, a maximum output power of 8.06 W at 937 nm is achieved with a slope efficiency of 47.3%. In passively Q-switched case, a simultaneous dual-wavelength laser at 937 nm and 933 nm is obtained with a maximum output power up to 1.72 W. The corresponding shortest pulse width is 21.1 ns at a repetition rate of 32.8 kHz, which leads to maximum pulse energy and peak power of 52.4 mu J and 2.48 kW, respectively. We believe that the present results represent the best that have ever achieved at this emission band in diode-end -pumped Nd:GGG lasers. Thus, for quasi-three-level laser, a weakly doped laser active medium could be an effective way for power scaling owing to thermal alleviation and reduction of reabsorption loss.
机译：我们使用弱ND3掺杂Gd3ga5012（GGG）晶体作为活性介质，在连续波和被动Q的Q开地状态下呈现二极管端泵浦准三级激光器的结果。在连续波外壳中，以937nm为本的最大输出功率为8.06W，斜率效率为47.3％。在被动Q切换的情况下，获得937nm和933nm处的同时双波长激光器，最大输出功率高达1.72W。相应的最短脉冲宽度为21.1ns，重复率为32.8kHz，导致最大脉冲能量和峰值功率分别为52.4 mu j和2.48 kW。我们认为，目前的结果代表了在二极管端--Pumped ND：GGG激光器中的发射带中实现的最佳选择。因此，对于准三级激光，由于热缓解和降低重吸收损失，弱掺杂的激光活性介质可以是动力缩放的有效方法。

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