Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination

F. Brizuela* Y. Wang C. A. Brewer F. Pedaci W. Chao E. H. Anderson Y. Liu K. A. GoldbergP. Naulleau P. Wachulak M. C. Marconi D. T. Attwood J. J. Rocca and C. S. Menoni

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Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination

机译：显微镜用13.2 nm台式激光照射的极紫外光刻掩模

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We report the demonstration of a reﬂection microscope that operates at 13.2 nm wavelength with a spatialnresolution of 55±3 nm. The microscope uses illumination from a tabletop extreme ultraviolet laser to ac-nquire aerial images of photolithography masks with a 20 s exposure time. The modulation transfer functionnof the optical system was characterized

机译：我们报告了一个反射显微镜的演示，该显微镜在13.2 nm波长下工作，空间分辨率为55±3 nm。显微镜使用台式极紫外激光照射，以20 s的曝光时间获取光刻掩模的航拍图像。表征了光学系统的调制传递函数

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《Optics Letters》 |2009年第3期|p.271-273|共3页
作者
F. Brizuela* Y. Wang C. A. Brewer F. Pedaci W. Chao E. H. Anderson Y. Liu K. A. GoldbergP. Naulleau P. Wachulak M. C. Marconi D. T. Attwood J. J. Rocca and C. S. Menoni;
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National Science Foundation Engineering Research Center for Extreme Ultraviolet Science and Technology,Colorado State University, Fort Collins, Colorado 80523, USACenter for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA* Corresponding author: brizuela@engr.colostate.edu* Corresponding author: phytong@zju.edu.cn;

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1. Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination [J] . F. Brizuela, Y. Wang, C. A. Brewer, Optics Letters . 2009,第3期

机译：显微镜用13.2 nm桌面激光照明的极紫外光刻掩模
2. Characterization of extreme ultraviolet lithography mask defects by actinic inspection with broadband extreme ultraviolet illumination [J] . Mincheol Park, Moonsuk Yi, Paul Mirkarimi, Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena . 2002,第6期

机译：宽带紫外线照射下光化检查表征极端紫外线光刻掩模缺陷
3. Demonstrating 30-nm spatial resolution of three-multilayer-mirror objective for extreme ultraviolet microscopy: Imaging test by observing lithography mask [J] . Mitsunori Toyoda, Kenjiro Yamasoe, Akifumi Tokimasa, _Applied Physics Express . 2014,第10期

机译：演示三层镜物镜在超紫外线显微镜下的30 nm空间分辨率：通过观察光刻掩模进行成像测试
4. 13.2 nm Table-Top Inspection Microscope for Extreme Ultraviolet Lithography Mask Defect Characterization [C] . Fernando Brizuela, Yong Wang, Courtney A. Brewer, Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference . 2009

机译：13.2 NM台式检查显微镜，用于极端紫外线光刻屏蔽缺陷表征
5. Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis [D] . Lyons, Adam 2013

机译：用于自然缺陷分析的极紫外光刻掩模版的局部掩模图案
6. Time-resolved two-dimensional profiles of electron density and temperature of laser-produced tin plasmas for extreme-ultraviolet lithography light sources [O] . Kentaro Tomita, Yuta Sato, Syouichi Tsukiyama, -1

机译：极紫外光刻光源的激光产生的锡等离子体的电子密度和温度的时间分辨二维分布
7. Compact 13.5-nm free-electron laser for extreme ultraviolet lithography [O] . Y. Socol, G. N. Kulipanov, A. N. Matveenko, 2011

机译：用于极紫外光刻的紧凑型13.5nm自由电子激光器

Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination

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