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Morphology control of TIPS-pentacene grains with inert gas injection and effects on the performance of OTFTs

机译:惰性气体注入控制TIPS-并五苯晶粒的形貌及其对OTFT性能的影响

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摘要

We applied Ar gas injection while drying droplets of TIPS-pentacene in a quartz tube and controlled the growth direction of the grain boundary and the morphology. The organic thin film transistors (OTFTs) showed a high mobility of 0.53 ± 0.02 cm~2/V s with a small deviation of 3.7% when the gas direction was parallel to the source-drain current, resulting in the direction of the grain boundary being parallel to the current. In contrast, OTFTs having grain boundaries perpendicular to the current flow displayed mobility of 0.06 ± 0.02 cm~2/Vs.
机译:我们在氩气注入的同时,在石英管中干燥了TIPS-并五苯的液滴,并控制了晶界的生长方向和形态。当气体方向与源漏电流平行时,有机薄膜晶体管(OTFT)的迁移率高,为0.53±0.02 cm〜2 / V s,偏差小为3.7%,导致晶界方向与当前平行。相反,具有垂直于电流的晶界的OTFT显示出0.06±0.02cm 2 / Vs的迁移率。

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