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首页> 外文期刊>Organic Electronics >Photoresponse of organic field-effect transistors based on conjugated polymer/fullerene blends
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Photoresponse of organic field-effect transistors based on conjugated polymer/fullerene blends

机译：基于共轭聚合物/富勒烯共混物的有机场效应晶体管的光响应

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摘要

Results on photoresponsive organic field-effect transistors (photOFETs) based on conjugated polymer/fullerene solid-state mixtures as active semiconductor layer and poly-vinyl-alcohol (PVA) or divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) as gate dielectrics are presented. With LiF/A1 top source-drain contacts all devices show dominantly n-type transistor behaviour. Devices fabricated with PVA as gate insulator reveal gate voltage induced saturation upon illumination but low photostability. Contrary, devices fabricated with BCB as gate insulator show transistor amplification in a wide range of illumination intensities. The increase of the drain-source current by more than two orders of magnitudes upon illumination is explained by the generation of a large carrier concentration due to photoinduced charge transfer at the conjugated polymer/fullerene bulk heterojunction upon illumination (photodoping). After illumination, a change of the dark transfer characteristics with respect to the initial transfer characteristics was observed. The initial dark state is achieved either by applying a large negative gate bias or by annealing. (c) 2006 Elsevier B.V. All rights reserved.
机译：给出了基于共轭聚合物/富勒烯固态混合物作为活性半导体层和聚乙烯醇（PVA）或二乙烯基四甲基二硅氧烷-双（苯并环丁烯）（BCB）作为栅极电介质的光响应有机场效应晶体管（photOFET）的结果。使用LiF / A1顶部源极-漏极触点时，所有器件都显示出主要的n型晶体管性能。以PVA为栅极绝缘体制造的器件在照明时会显示出栅极电压引起的饱和，但光稳定性较低。相反，用BCB作为栅极绝缘体制造的器件在很宽的照明强度范围内显示出晶体管放大。照明时，漏源电流增加了两个数量级以上，这是由于在照明（光掺杂）时，共轭聚合物/富勒烯本体异质结处的光诱导电荷转移而产生了较大的载流子浓度，从而解释了这种情况。照明后，观察到暗转印特性相对于初始转印特性的变化。初始暗态可通过施加较大的负栅极偏置或通过退火来实现。 （c）2006 Elsevier B.V.保留所有权利。

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