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Synthesis and characterization of nanocrystalline MoBi2Te5 thin films for photoelectrode applications

机译：用于光电极的纳米MoBi 2 Te 5 薄膜的合成与表征

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Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using arrested precipitation technique which is based on self-organized growth process. As deposited MoBi2Te5 thin films were dried in constant temperature oven at 110°C and further characterized for their optical, structural, morphological, compositional, and electrical analysis. Optical absorption spectra recorded in the wavelength range 300-800 nm showed band gap (E g) 1.44 eV. X-ray diffraction pattern and scanning electron microscopic images showed that MoBi2Te5 thin films are granular, nanocrystalline having rhombohedral structure. The compositional analysis showed close agreements in theoretical and experimental atomic percentages of Mo4+, Bi3+, and Te2− suggest that chemical formula MoBi2Te5 assigned to as deposited molybdenum bismuth telluride new material is confirmed. The electrical conductivity and thermoelectric power measurement showed that the films are semiconducting with n-type conduction. The fill factor and conversion efficiency was characterized by photoelectrochemical (PEC) technique. In this article, we report the optostructural, morphological, compositional, and electrical characteristics of nanocrystalline MoBi2Te5 thin films to check its suitability as photoelectrode in PEC cell.View full textDownload full textKeywordschalcogenides, chemical synthesis, X-ray diffraction, microstructure, transport propertiesRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/09500839.2012.700410
机译：采用基于自组织生长过程的阻滞沉淀技术，在干净的玻璃基板上制备了碲化钼铋薄膜。沉积的MoBi 2 Te 5 薄膜在110°C的恒温烤箱中干燥，并对其光学，结构，形态，组成和电学分析进行表征。记录在300-800 nm波长范围内的光吸收光谱显示带隙（E g ）1.44 eV。 X射线衍射图谱和扫描电镜观察表明，MoBi 2 Te 5 薄膜为颗粒状，具有菱形结构的纳米晶。组成分析表明，Mo 4 + ，Bi 3 + 和Te 2∠的理论和实验原子百分率接近，表明化学确定了作为沉积的碲化钼铋新材料的分子式MoBi 2 Te 5 。电导率和热电功率测量表明，该膜是半导电的，具有n型导电性。填充因子和转化效率通过光电化学（PEC）技术进行表征。在本文中，我们报告了纳米晶MoBi 2 Te 5 薄膜的光电结构，形态，组成和电学特性，以检查其在PEC电池中作为光电极的适用性。查看全文全文下载全文关键字关键词缩醛杀螨剂，化学合成，X射线衍射，微观结构，传输特性相关var addthis_config = {ui_cobrand：“泰勒和弗朗西斯在线”，servicescompact：“ citeulike，netvibes，twitter，technorati，delicious，linkedin，facebook，stumbleupon，digg， google，more“，发布号：” ra-4dff56cd6bb1830b“};添加到候选列表链接永久链接http://dx.doi.org/10.1080/09500839.2012.700410

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