The influence of interfaces on the formation of bubbles in He-ion-irradiated Cu/Mo nanolayers

Nan Liac J.J. Carterb A. Misrac L. Shaob H. Wangd amp; X. Zhanga*

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The influence of interfaces on the formation of bubbles in He-ion-irradiated Cu/Mo nanolayers

机译：界面对He离子辐照的Cu / Mo纳米层中气泡形成的影响

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The role of immiscible Cu/Mo interfaces on the formation of helium (He) bubbles in ion-irradiated Cu/Mo 5ânm multilayers is examined. Interfaces significantly enhance the critical He concentration above which bubbles, approximately 1ânm in diameter, are detected via through-focus imaging in a transmission electron microscope. He-to-vacancy ratio affects the formation and distribution of He bubbles. The diameter of He bubbles in Cu appears to be slightly larger than that in Mo.View full textDownload full textKeywordsion irradiation, Cu/Mo multilayers, He bubbles, interfacesRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/09500839.2010.522210

机译：检查了不溶混的Cu / Mo界面在离子辐照的Cu / Mo 5纳米多层膜中氦（He）气泡形成上的作用。界面显着增强了临界He浓度，高于该浓度时，通过透射电子显微镜中的焦点成像检测到直径约1 nm的气泡。 He与空位的比率影响He气泡的形成和分布。铜中He气泡的直径似乎比Mo中的直径稍大。查看全文下载全文关键字辐照，Cu / Mo多层膜，He气泡，界面，netvibes，twitter，technorati，可口，linkedin，facebook，stumbleupon，digg，google，更多”，发布：“ ra-4dff56cd6bb1830b”};添加到候选列表链接永久链接http://dx.doi.org/10.1080/09500839.2010.522210

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《Philosophical Magazine Letters》 |2011年第1期|p.18-28|共11页
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Nan Liac J.J. Carterb A. Misrac L. Shaob H. Wangd amp; X. Zhanga*;
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1. The influence of interfaces on the formation of bubbles in He-ion-irradiated Cu/Mo nanolayers [J] . Nan Li, J.J. Carter, A. Misra Philosophical Magazine Letters . 2011,第1a2期

机译：界面对He离子辐照的Cu / Mo纳米层中气泡形成的影响
2. Molecular-nanolayer-induced suppression of in-plane Cu transport at Cu-silica interfaces [J] . D. D. Gandhi, P. G. Ganesan, V. Chandrasekar, Applied Physics Letters . 2007,第16期

机译：分子纳米层诱导的铜-硅界面平面内铜传输的抑制
3. Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament [J] . Rahaman S. Z., Maikap S., Chen W. S., Journal of Applied Physics . 2012,第6期

机译：GeSex / W界面上的TaOx纳米层对电阻开关存储性能的影响以及Cu纳米丝的研究
4. Influence of the GA Content on the Mo/Cu(In,Ga)Se2 Interface Formation [C] . Wolfram Witte, Robert Kniese, Axel Eicke, . 2006

机译：GA含量对Mo / Cu（In，Ga）Se2界面形成的影响
5. Role of interfaces on severe plastic deformation and He-irradiation tolerance in Cu-Nb nanocomposites. [D] . Lach, Timothy Gerald. 2016

机译：界面在Cu-Nb纳米复合材料中严重塑性变形和He辐射耐受性中的作用。
6. Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface [O] . Sheikh Ziaur Rahaman, Siddheswar Maikap, Ta-Chang Tien, 2012

机译：在Cu / TaOx界面使用Ti纳米层具有出色的电阻记忆特性和开关机制
7. Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface [O] . Sheikh Rahaman, Siddheswar Maikap, Ta-Chang Tien, 2012

机译：在Cu / TaOx界面使用Ti纳米层具有出色的电阻记忆特性和开关机制

The influence of interfaces on the formation of bubbles in He-ion-irradiated Cu/Mo nanolayers

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