Long-range potential fluctuations have been quantified in amorphous and crystallised thin films of a family of Ge-Sb-Te (GST) chalcogenide glasses. Among the compositions studied, the width of the potential fluctuations is the smallest for amorphous Ge2Sb2Te5. This is also the most robust material in terms of the number of write-erase cycles for GST films when used as phase change memory materials. A plausible explanation for this observation is given and a criterion for selecting suitable compositions in optical memory devices is proposed.View full textDownload full textKeywordschalcogenide glasses, crystallisation, electronic transport, phase changesRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/09500839.2010.541396
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机译：在Ge-Sb-Te（GST）硫族化物玻璃系列的非晶和结晶薄膜中，已对远距离电势波动进行了量化。在所研究的成分中，非晶Ge 2 Sb 2 Te 5 的电势波动幅度最小。就用作相变存储材料的GST膜的写-擦除循环数而言，这也是最耐用的材料。给出了对此现象的合理解释，并提出了在光学存储设备中选择合适成分的标准。查看全文下载全文关键词：：“ citeulike，netvibes，twitter，technorati，美味，linkedin，facebook，stumbleupon，digg，google，更多”，pubid：“ ra-4dff56cd6bb1830b”};添加到候选列表链接永久链接http://dx.doi.org/10.1080/09500839.2010.541396
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