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PHASE CHANGE MATERIAL, A PHASE CHANGE RANDOM ACCESS MEMORY DEVICE INCLUDING THE PHASE CHANGE MATERIAL, A SEMICONDUCTOR STRUCTURE INCLUDING THE PHASE CHANGE MATERIAL, AND METHODS OF FORMING THE PHASE CHANGE MATERIAL
PHASE CHANGE MATERIAL, A PHASE CHANGE RANDOM ACCESS MEMORY DEVICE INCLUDING THE PHASE CHANGE MATERIAL, A SEMICONDUCTOR STRUCTURE INCLUDING THE PHASE CHANGE MATERIAL, AND METHODS OF FORMING THE PHASE CHANGE MATERIAL
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机译：相变材料，包括相变材料的相变随机存取存储器，包括相变材料的半导体结构以及形成相变材料的方法
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摘要
A phase change material including a high adhesion phase change material formed on a dielectric material and a low adhesion phase change material formed on the high adhesion phase change material. The high adhesion phase change material includes a greater amount of at least one of nitrogen and oxygen than the low adhesion phase change material. The phase change material is produced by forming a first chalcogenide compound material including an amount of at least one of nitrogen and oxygen on the dielectric material and forming a second chalcogenide compound including a lower percentage of at least one of nitrogen and oxygen on the first chalcogenide compound material. A phase change random access memory device, and a semiconductor structure are also disclosed.
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