Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence

著录项

• 来源
  《Photovoltaics, IEEE Journal of》 |2017年第3期|817-821|共5页
• 作者

  Kan-Hua Lee; Keith W. J. Barnham; John S. Roberts; Diego Alonso-Álvarez; N. P. Hylton; Markus Führer; Nicholas J. Ekins-Daukes;

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• 作者单位

  Department of Physics, Imperial College London, London, U.K.;

  Department of Physics, Imperial College London, London, U.K.;

  EPSRC National Centre for III-V Technologies, Sheffield, U.K.;

  Department of Physics, Imperial College London, London, U.K.;

  Department of Physics, Imperial College London, London, U.K.;

  Department of Physics, Imperial College London, London, U.K.;

  Department of Physics, Imperial College London, London, U.K.;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Quantum well devices; Radiative recombination; Temperature measurement; Photovoltaic cells; Temperature control;

  机译：量子阱器件;辐射复合;温度测量;光伏电池;温度控制;