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首页> 外文期刊>Physica status solidi >Uniform growth of Ⅲ-nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor
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Uniform growth of Ⅲ-nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor

机译:使用单晶片旋转盘MOCVD反应器在200 mm硅衬底上均匀生长Ⅲ型氮化物

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摘要

We are reporting on the uniform growth of Ⅲ-nitrides (AlN, GaN, and AlGaN layers) on 200 mm silicon substrates using Veeco's Propel rotating disk, single wafer vertical MOCVD reactor. The reactor is designed for homogeneous alkyl/hydride flow distribution, and uniform temperature profile, resulting in excellent uniformity in epilayer thickness, alloy composition. and doping profiles. Thickness uniformity for single layers of A1N and GaN are 0.71 and 0.67% 1σ, respectively, without edge exclusion. A 21nm Al_(0.23)Ga_(0.77)N layer has 0.29%, 1σ uniformity for Al composition, and a range of 1.2 nm (max-min) for thickness. Uniformity of magnesium and carbon doping profiles is presented across the 200 mm substrate.
机译:我们报道了使用Veeco的Propel转盘,单晶片垂直MOCVD反应器在200 mm硅衬底上均匀生长Ⅲ型氮化物(AlN,GaN和AlGaN层)的情况。该反应器设计用于均匀的烷基/氢化物流量分布和均匀的温度曲线,从而在表层厚度,合金成分方面具有出色的均匀性。和掺杂轮廓。没有边缘排斥的AlN和GaN单层的厚度均匀性分别为0.71和0.67%1σ。 21nm的Al_(0.23)Ga_(0.77)N层具有0.29%的Al组成均匀度为1σ,并且厚度范围为1.2nm(最大-最小)。在200 mm的基板上呈现出镁和碳掺杂分布的均匀性。

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