Investigation of arsenic-doped ZnO thin films grown on Si substrate by atmospheric-pressure metal-organic chemical vapor deposition

著录项

• 来源
  《Physica status solidi》 |2012年第6期|p.1053-1058|共6页
• 作者

  S. C. Hung; K. J. Wang; S. M. Lan; T. N. Yang; W. Y. Uen; G. C. Chi;

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• 作者单位

  Optical Science Center, National Central University, Jhong-Li 320, Taiwan;

  Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung-Yuan Christian University, Chung-Li 32023, Taiwan;

  Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung-Yuan Christian University, Chung-Li 32023, Taiwan,Institute of Nuclear Energy Research Atomic Energy Council, Longtan, Taoyuan 32546, Taiwan;

  Institute of Nuclear Energy Research Atomic Energy Council, Longtan, Taoyuan 32546, Taiwan;

  Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung-Yuan Christian University, Chung-Li 32023, Taiwan;

  Department of Photonics, National Chiao Tung University, Hsinchu 300, Taiwan;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  annealing; doping; MOCVD; zinc oxide;

  机译：退火;掺杂MOCVD;氧化锌;