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首页> 外文期刊>Thin Solid Films >Structural and optical properties of ZnO films grown on ion-plated Ga doped ZnO buffer layers by atmospheric-pressure chemical vapor deposition using Zn and H_2O as source materials
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Structural and optical properties of ZnO films grown on ion-plated Ga doped ZnO buffer layers by atmospheric-pressure chemical vapor deposition using Zn and H_2O as source materials

机译：以Zn和H_2O为原料的常压化学气相沉积法在离子镀Ga掺杂的ZnO缓冲层上生长的ZnO薄膜的结构和光学性质

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摘要

Zinc oxide (ZnO) films were grown on glass substrates with ion-platedGa-doped ZnO (GZO) buffer layers at various substrate temperatures by atmospheric-pressure chemical vapor deposition using Zn powder and water as precursors. All the X-ray diffraction patterns of the ZnO/GZO films were dominated by a ZnO(002) peak, indicating the successful growth of highly c-axis oriented films. The substrate temperature dependence of growth rate was divided into three regions with the different activation energies, i.e. re-evaporation, mass-transport controlled and surface-controlled regions. Scanning-electron-microscope observations revealed that the films grown at the substrate temperature in the mass-transport-controlled region exhibited the terrace-like surface morphology with rock-like structures. Photoluminescence spectra of the ZnO/GZO films were composed of a near-band-edge (NBE) emission at a wavelength of about 380 nm and a broad-band emission spreading over the visible wavelength region, as regardless of the substrate temperature. The visible-broad-band emissions observed on many samples could be decomposed into two or three peak emissions with the Lorentzian shapes. With increasing substrate temperature, the wavelength of the emission showing the strongest intensity, which was obtained by the decomposition of the visible-broad-band emission, shifted towards longer wavelengths together with the broadening of its width.
机译：通过使用锌粉和水作为前驱体的大气压化学气相沉积法，在具有各种离子镀Ga掺杂ZnO（GZO）缓冲层的玻璃基板上，通过常压化学气相沉积，在玻璃基板上生长氧化锌（ZnO）膜。 ZnO / GZO薄膜的所有X射线衍射图样均以ZnO（002）峰为主，表明高c轴取向薄膜的成功生长。将衬底温度对生长速率的依赖性分为具有不同活化能的三个区域，即再蒸发，传质控制和表面控制区域。扫描电子显微镜观察表明，在质量控制区域中在衬底温度下生长的膜表现出具有岩石状结构的梯状表面形态。 ZnO / GZO薄膜的光致发光光谱由波长约为380 nm的近带边缘（NBE）发射和遍布可见波长区域的宽带发射组成，与衬底温度无关。在许多样品上观察到的可见宽带发射可以分解为具有洛伦兹形状的两个或三个峰值发射。随着基板温度的升高，通过可见宽带发射的分解获得的强度最高的发射波长会随着波长的增加而向更长的波长移动。

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