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首页> 外文期刊>Physica status solidi >Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi- Level Pinning
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Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi- Level Pinning

机译：硅上过渡金属氧化物的溅射沉积：证明氧轰击对费米能级钉扎的作用

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摘要

Different magnetron sputtering-based deposition methods of nickel oxide SiO2-passivated Si surfaces are compared. Results highlight that the presence of oxygen in the deposition chamber during reactive sputtering drastically affects the Si/SiO2 interface. An alternative method for the preparation of NiO is the sputtering of metallic nickel in oxygen-free atmosphere followed by a post oxidation of the deposited layer in an oxygen atmosphere without plasma exposition is proposed. This method is introduced as metal layer oxidation (MLO). Using this technique, the barrier height on n-type silicon increases from approximate to 0.4 eV for reactively sputtered NiO to more than 0.6 eV for the MLO method. In situ photoelectron spectroscopy evidences the formation of an extra electronic state when NiO is reactively sputtered, which is assigned to the intense oxygen ion bombardment of the Si/SiO2 surface during the process. This extra-electronic state pins the silicon energy bands in an undesirable position. The extra-electronic state is associated with oxygen interstitial in the SiO2 implanted during reactive sputtering.
机译：比较了不同的基于磁控溅射的氧化镍SiO2钝化的Si表面沉积方法。结果表明，在反应溅射过程中，沉积室中氧气的存在会严重影响Si / SiO2界面。制备NiO的另一种方法是建议在无氧气氛中溅射金属镍，然后在无等离子体暴露的情况下在氧气氛中对沉积层进行后氧化。此方法作为金属层氧化（MLO）引入。使用这种技术，n型硅上的势垒高度从反应溅射NiO的大约0.4 eV增加到MLO方法的0.6 eV以上。原位光电子能谱表明，当反应性溅射NiO时会形成额外的电子态，这归因于该过程中Si / SiO2表面的强烈氧离子轰击。这种超电子状态将硅能带固定在不希望的位置。超电子态与在反应溅射过程中注入的SiO2中的氧间隙有关。

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  • 来源
    《Physica status solidi》 |2019年第23期|1900730.1-1900730.7|共7页
  • 作者

    Poulain Raphael; Proost Joris; Klein Andreas;

  • 作者单位

    Tech Univ Darmstadt Inst Mat Sci Elect Struct Mat Otto Berndt Str 3 D-64287 Darmstadt Germany|Catholic Univ Louvain Mat & Proc Engn Pl Levant 2 B-1348 Louvain La Neuve Belgium;

    Catholic Univ Louvain Mat & Proc Engn Pl Levant 2 B-1348 Louvain La Neuve Belgium;

    Tech Univ Darmstadt Inst Mat Sci Elect Struct Mat Otto Berndt Str 3 D-64287 Darmstadt Germany;

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  • 正文语种 eng
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  • 关键词

    Fermi-level pinning; interface passivation; NiO; photoemission; Si;

    机译：费米级钉扎;界面钝化;氧化镍光发射硅;

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