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Thickness-dependent electronic structure in ultrathin LaNiO_3 films under tensile strain

机译：LaNiO_3超薄膜在拉伸应变下的厚度依赖性电子结构

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摘要

We investigated electronic-structure changes of tensile-strained ultrathin LaNiO_3 (LNO) films from ten to one unit cells (UCs) using angle-resolved photoemission spectroscopy (ARPES). We found that there is a critical thickness t_c between four and three UCs below which Ni e_g electrons are confined in two-dimensional space. Furthermore, the Fermi surfaces (FSs) of LNO films below t_c consist of two orthogonal pairs of one-dimensional (1D) straight parallel lines. Such a feature is not accidental as observed in constant-energy surfaces at all binding energies, which is not explained by first-principles calculations or the dynamical mean-field theory. The ARPES spectra also show anomalous spectral behaviors, such as no quasiparticle peak at the Fermi momentum but fast band dispersion comparable to the bare-band one, which is typical in a 1D system. As its possible origin, we propose 1D FS nesting, which also accounts for FS superstructures observed in ARPES.
机译：我们使用角分辨光发射光谱法（ARPES）研究了拉伸应变的超薄LaNiO_3（LNO）薄膜从十个单位电池（UCs）到一个单位电池（UCs）的电子结构变化。我们发现，在四个和三个UC之间有一个临界厚度t_c，低于该厚度，Ni e_g电子被限制在二维空间中。此外，t_c以下的LNO膜的费米表面（FSs）由两对正交的一维（1D）直线平行线组成。在所有结合能的恒定能量表面上观察到，这种特征并非偶然，这不是第一性原理计算或动力学平均场理论所能解释的。 ARPES光谱还显示出异常的光谱行为，例如在费米动量处没有准粒子峰，但具有与一维系统中的裸带相当的快速带分散。作为其可能的起源，我们提出了一维FS嵌套，它也考虑了ARPES中观察到的FS超结构。

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  • 来源
    《Physical review》 |2016年第3期|035141.1-035141.7|共7页
  • 作者

    Hyang Keun Yoo; Seung Ill Hyun; Young Jun Chang; Luca Moreschini; Chang Hee Sohn; Hyeong-Do Kim; Aaron Bostwick; Eli Rotenberg; Ji Hoon Shim; Tae Won Noh;

  • 作者单位

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, Republic of Korea, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea;

    Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;

    Department of Physics, University of Seoul, Seoul 130-743, Republic of Korea, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, Republic of Korea, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea;

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, Republic of Korea, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea;

    Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea, Division of Advanced Nuclear Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, Republic of Korea, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea;

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