Long-lived excitons in GaN/AlN nanowire heterostructures

M. Beeler; C. B. Lim; P. Hille; J. Bleuse; J. Schoermann; M. de la Mata; J. Arbiol; M. Eickhoff; E. Monroy

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Long-lived excitons in GaN/AlN nanowire heterostructures

机译：GaN / AlN纳米线异质结构中的长寿命激子

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GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range of a few MV/cm associated to the spontaneous and piezoelectric polarization, and a radial piezoelectric contribution associated to the shear components of the lattice strain. At low dopant concentrations, a large electron-hole separation in both the axial and radial directions is present. The relatively weak radial electric fields, which are about one order of magnitude smaller than the axial fields, are rapidly screened by doping. This bidirectional screening leads to a radial and axial centralization of the hole underneath the electron, and consequently, to large decreases in PL decay times, in addition to luminescence blue shifts.

机译：GaN / AlN纳米线异质结构可以显示微秒级的光致发光（PL）衰减时间，该时间持续到室温。用Ge掺杂GaN纳米盘插入物可以将这些PL衰减时间减少两个数量级。这些现象可以通过GaN纳米盘内的三维电场分布来解释，该电场具有与自发极化和压电极化相关的几个MV / cm范围内的轴向分量，以及与GaN剪切分量相关的径向压电上的贡献。晶格应变。在低掺杂剂浓度下，在轴向和径向上都存在较大的电子-空穴间隔。通过掺杂快速屏蔽了相对弱的径向电场，该径向电场比轴向电场小大约一个数量级。这种双向屏蔽导致电子下方的空穴在径向和轴向上居中，因此，除了发光蓝移之外，还导致PL衰减时间大大减少。

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《Physical review》 |2015年第20期|205440.1-205440.8|共8页
作者
M. Beeler; C. B. Lim; P. Hille; J. Bleuse; J. Schoermann; M. de la Mata; J. Arbiol; M. Eickhoff; E. Monroy;
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Universite Grenoble Alpes, 38000 Grenoble, France,CEA-Grenoble, INAC, SP2M-NPSC, 17 av. des Martyrs, 38054 Grenoble, France;

Universite Grenoble Alpes, 38000 Grenoble, France,CEA-Grenoble, INAC, SP2M-NPSC, 17 av. des Martyrs, 38054 Grenoble, France;

I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany;

Universite Grenoble Alpes, 38000 Grenoble, France,CEA-Grenoble, INAC, SP2M-NPSC, 17 av. des Martyrs, 38054 Grenoble, France;

I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany;

Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Barcelona, Catalonia, Spain;

Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Barcelona, Catalonia, Spain,ICREA and lnstitut Catala de Nanociencia i Nanotecnologia (ICN2), 08193 Barcelona, Catalonia, Spain;

I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany;

Universite Grenoble Alpes, 38000 Grenoble, France,CEA-Grenoble, INAC, SP2M-NPSC, 17 av. des Martyrs, 38054 Grenoble, France;

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Ⅱ-Ⅵ semiconductors; electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems;

机译：Ⅱ-Ⅵ半导体;多层;量子阱;介观和纳米级系统中的电子态和集体激发;

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1. Long-lived excitons up to 1 mu s in GaN/AlN self-assembled quantum dots [J] . Kako S., Miyamura M., Hoshino K., Physica status solidi, B. Basic research . 2003,第2期

机译：GaN / AlN自组装量子点中高达1μs的长寿命激子
2. The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure [J] . R. Tuelek, E. Arslan, A. Bayrakli, Thin Solid Films . 2014,第jana31期

机译：插入在两个AlN层之间的GaN厚度对晶格匹配的AlInN / AlN / GaN / AlN / GaN双通道异质结构的输运性能的影响
3. Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures [J] . Engin Arslan, Sevil Turan, Sibel Goekden, Thin Solid Films . 2013,第deca2期

机译：AlInN / AlN / GaN单通道和AlInN / AlN / GaN / AlN / GaN双通道异质结构中的电流传输机制
4. Long-lived excitons up to 1 μs in GaN/AlN self-assembled quantum dots [C] . S. Kako, M. Miyamura, K. Hoshino, International conference on nitride semiconductors . 2003

机译：GaN / ALN自组装量子点长达1μs的长寿激子
5. Selective Area Epitaxy of GaN-Based Nanowire Heterostructures for Applications in Photonic and Electronic Devices [D] . Wang, Renjie. 2018

机译：甘油基纳米线异质结构的选择性区域外星应用在光子和电子器件中的应用
6. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy [O] . Ling Sang, Qin Sheng Zhu, Shao Yan Yang, 2014

机译：X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
7. Long-lived excitons in GaN/AlN nanowire heterostructures [O] . Beeler, M., Lim, C. B., Hille, Pascal, 2016

机译：GaN / AlN纳米线异质结构中的长寿命激子
8. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors. [R] . Li, Y., Xiang, J., Qian, F., 2006

机译：无掺杂GaN / alN / alGaN径向纳米线异质结构作为高电子迁移率晶体管。

Long-lived excitons in GaN/AlN nanowire heterostructures

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