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Structural and electrical properties of metastable defects in hydrogenated amorphous silicon

机译:氢化非晶硅中亚稳缺陷的结构和电学性质

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摘要

The structural and electrical properties of metastable defects in various types of hydrogenated amorphous silicon have been studied using a powerful combination of continuous wave electron-paramagnetic resonance spectroscopy, electron spin echo (ESE) decay measurements, and Doppler broadening positron annihilation spectroscopy. The observed dependence of the paramagnetic defect density on the Doppler S parameter indicates that porous, nanosized void-rich materials exhibit higher spin densities, while dense, divacancy-dominated materials show smaller spin densities. However, after light soaking more similar spin densities are observed, indicating a long-term defect creation process in the Staebler-Wronski effect that does not depend on the a-Si:H nanostructure. From ESE decays it appears that there are fast and slowly relaxing defect types, which are linked to various defect configurations in small and large open volume deficiencies. A nanoscopic model for the creation of light-induced defects in the a-Si:H nanostructure is proposed.
机译:使用连续波电子-顺磁共振光谱,电子自旋回波(ESE)衰减测量和多普勒展宽正电子an没光谱的强大组合,研究了各种类型的氢化非晶硅中亚稳缺陷的结构和电学性质。观察到的顺磁缺陷密度对多普勒S参数的依赖性表明,多孔的,纳米级的富含空隙的材料表现出较高的自旋密度,而致密的,以空位为主的材料则表现出较小的自旋密度。然而,在光浸泡后,观察到更相似的自旋密度,表明在Staebler-Wronski效应中的长期缺陷产生过程不依赖于a-Si:H纳米结构。从ESE衰变来看,似乎存在快速和缓慢松弛的缺陷类型,这些缺陷类型与大和小体积缺陷中的各种缺陷配置有关。提出了在a-Si:H纳米结构中产生光致缺陷的纳米模型。

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  • 来源
    《Physical review》 |2015年第24期|245207.1-245207.6|共6页
  • 作者单位

    Photovoltaic Materials and Devices, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Mekelweg 4, 2628 CD, Delft, Netherlands ,Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands;

    Berlin Joint EPR lab, Institut fuer Silizium-Photovoltaik, Helmholtz-Zentrum Berlin fuer Materialen und Energie, Kekulestrasse 5, 12489 Berlin, Germany;

    Berlin Joint EPR lab, Institut fuer Silizium-Photovoltaik, Helmholtz-Zentrum Berlin fuer Materialen und Energie, Kekulestrasse 5, 12489 Berlin, Germany ,The Photon Science Institute, EPSRC National EPR Facility and Service, School of Chemistry, The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom;

    Berlin Joint EPR lab, Institut fuer Silizium-Photovoltaik, Helmholtz-Zentrum Berlin fuer Materialen und Energie, Kekulestrasse 5, 12489 Berlin, Germany;

    Fundamental Aspects of Materials and Energy, Faculty of Applied Sciences, Delft University of Technology, Mekelweg 15, 2629 JB, Delft, Netherlands;

    Fundamental Aspects of Materials and Energy, Faculty of Applied Sciences, Delft University of Technology, Mekelweg 15, 2629 JB, Delft, Netherlands;

    Neutron and Positron Methods in Materials, Faculty of Applied Sciences, Delft University of Technology, Mekelweg 15, 2629 JB, Delft, Netherlands;

    Photovoltaic Materials and Devices, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Mekelweg 4, 2628 CD, Delft, Netherlands;

    Photovoltaic Materials and Devices, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Mekelweg 4, 2628 CD, Delft, Netherlands;

    Photovoltaic Materials and Devices, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Mekelweg 4, 2628 CD, Delft, Netherlands;

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  • 正文语种 eng
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  • 关键词

    amorphous semiconductors; glasses; electron paramagnetic resonance and relaxation; infrared and raman spectra; positron annihilation;

    机译:非晶半导体;眼镜;电子顺磁共振和弛豫;红外和拉曼光谱;正电子an灭;

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