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Disorder influences the quantum critical transport at a superconductor-to-insulator transition

机译:无序影响超导体到绝缘体跃迁的量子临界输运

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We isolated flux disorder effects on the transport at the critical point of the quantum magnetic field tuned superconductor-to-insulator transition (BSIT). The experiments employed films patterned into geometrically disordered hexagonal arrays. Spatial variations in the flux per unit cell, which grow in a perpendicular magnetic field, constitute flux disorder. The growth of flux disorder with magnetic field limited the number of BSITs exhibited by a single film due to flux matching effects. The critical metallic resistance at successive BSITs grew with flux disorder contrary to predictions of its universality. These results open the door for controlled studies of disorder effects on the universality class of an ubiquitous quantum phase transition.
机译:我们在量子磁场调谐的超导体到绝缘体跃迁(BSIT)的临界点处隔离了对通量无序影响的传输。实验采用将膜图案化成几何无序的六边形阵列的方法。在垂直磁场中生长的每晶胞通量的空间变化构成通量紊乱。由于磁场的通量匹配效应,随着磁场的变化,磁通量紊乱的增长限制了单个膜所显示的BSIT数量。连续BSIT处的临界金属电阻随着通量紊乱而增长,这与其普遍性的预测相反。这些结果为无序效应对普遍存在的量子相变的通用性类别的受控研究打开了大门。

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