Phonon decay in silicon nanocrystals: Fast phonon recycling

A. A. Prokofiev; A. N. Poddubny; I. N. Yassievich

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Phonon decay in silicon nanocrystals: Fast phonon recycling

机译：硅纳米晶体中的声子衰减：声子快速回收

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We present a theory of electron-phonon interaction and phonon decay in Si nanocrystals based on sp~3d~5s~* empirical tight-binding model and anharmonic Keating model. We demonstrate that the time of optical phonon emission by hot carriers in Si nanocrystal lies in the subpicosecond time range. However, due to the fast phonon recycling, the energy relaxation rate is determined not by the phonon emission but by the phonon decay rate. The decay rate of the optical phonon into two phonons of smaller energy is found to be in the 1-10 ps range. It is this anharmonic phonon decay process that may control the energy relaxation rate of excited carriers in Si nanocrystals.

机译：基于sp〜3d〜5s〜*经验紧密结合模型和非谐基廷模型，我们提出了硅纳米晶体中电子-声子相互作用和声子衰减的理论。我们证明了硅纳米晶体中热载流子发出光子的时间在亚皮秒的时间范围内。但是，由于声子的快速循环，能量弛豫率不是由声子发射决定的，而是由声子衰减率决定的。发现光学声子变成两个能量较小的声子的衰减率在1-10 ps范围内。正是这种非谐声子衰变过程可以控制Si纳米晶体中激发载流子的能量弛豫速率。

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来源
《Physical review》 |2014年第12期|125409.1-125409.5|共5页
作者
A. A. Prokofiev; A. N. Poddubny; I. N. Yassievich;
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作者单位

Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia;

Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia;

Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia and Saint Petersburg Electrotechnical University 'LETI', 197376 St. Petersburg, Russia;

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正文语种 eng
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nanocrystalline materials; single particle states;

机译：纳米晶体材料;单粒子态;

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Phonon decay in silicon nanocrystals: Fast phonon recycling

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