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首页> 外文期刊>Physical review >Interplane resistivity of isovalent doped BaFe_2(As_(1-x)P_x)_2
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Interplane resistivity of isovalent doped BaFe_2(As_(1-x)P_x)_2

机译：等价掺杂BaFe_2（As_（1-x）P_x）_2的平面电阻率

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Temperature-dependent interplane resistivity ρ_c(T) was measured for the iron-based superconductor BaFe_2(As(1-x)P_x)_2 over a broad isoelectron phosphorus substitution range from x = 0 to x — 0.60, from nonsuperconducting parent compound to heavily overdoped superconducting composition with T_c ≈ 10 K. The features due to structural and magnetic transitions are clearly resolved in ρ_c(T) of the underdoped crystals. A characteristic maximum in ρ_c(T), found in the parent BaFe_2As_2 at around 200 K, moves rapidly with phosphorus substitution to high temperatures. At the optimal doping, the interplane resistivity shows T-linear temperature dependence without any crossover anomalies, similar to the previously reported in-plane resistivity. This observation is in stark contrast with dissimilar temperature dependencies found at optimal doping in electron-doped Ba(Fe(1-x)Co_x)_2As_2. Our finding suggests that despite similar values of the resistivity and its anisotropy, the temperature-dependent transport in the normal state is very different in electron and isoelectron-doped compounds. Similar temperature dependence of both in-plane and interplane resistivities, in which the dominant contributions are coming from different parts of the Fermi surface, suggests that scattering is the same on the whole Fermi surface. Since magnetic fluctuations are expected to be much stronger on the quasinested sheets, this observation may point to the importance of the interorbital scattering between different sheets.
机译：在从x = 0到x-0.60的宽等电子电子磷取代范围（从非超导母体化合物到重金属）中，测量了铁基BaFe_2（As（1-x）P_x）_2的温度依赖性平面电阻率ρ_c（T） T_c≈10 K的超掺杂超导成分。由于结构和磁跃迁而产生的特征在欠掺杂晶体的ρ_c（T）中得到了清晰的解析。在母体BaFe_2As_2中大约在200 K处发现的ρ_c（T）的特征最大值随磷的取代迅速向高温移动。在最佳掺杂下，平面间电阻率显示出T线性温度依赖性，没有任何交叉异常，类似于先前报道的平面内电阻率。该观察结果与在掺杂电子的Ba（Fe（1-x）Co_x）_2As_2的最佳掺杂中发现的不同温度依赖性形成鲜明对比。我们的发现表明，尽管电阻率和其各向异性的值相似，但是在电子和等电子掺杂化合物中，正常状态下依赖温度的传输却非常不同。平面电阻率和平面电阻率的温度依赖性相似，其中主要贡献来自费米表面的不同部分，这表明在整个费米表面上的散射是相同的。由于期望在准带正负片上的磁起伏要大得多，因此该观察结果可能指出了不同片之间的轨道间散射的重要性。

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