Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na_2IrO_3 thin films

Marcus Jenderka; Jose Barzola-Quiquia; Zhipeng Zhang; Heiko Frenzel; Marius Grundmann; Michael Lorenz

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Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na_2IrO_3 thin films

机译：异质外延Na_2IrO_3薄膜的Mott变程跳跃和弱抗定位作用

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Iridate thin films are a prerequisite for any application utilizing their cooperative effects resulting from the interplay of strong spin-orbit coupling and electronic correlations. Here, heteroepitaxial Na_2IrO_3 thin films with (001) out-of-plane crystalline orientation and well-defined in-plane epitaxial relationship are presented on various oxide substrates. Resistivity is dominated by a three-dimensional variable-range hopping mechanism in a large temperature range between 300 K and 40 K. Optical experiments show the onset of a small optical gap E_(go)≈ 200 meV and a splitting of the Ir 5d-t_(2g) manifold. Positive magnetoresistance below 3 T and 25 K shows signatures of a weak antilocalization effect.

机译：虹彩薄膜是利用强自旋轨道耦合和电子相关性相互作用产生的协同效应进行应用的前提。在此，在各种氧化物衬底上呈现具有（001）面外晶体取向和明确定义的面内外延关系的异质外延Na_2IrO_3薄膜。在300 K至40 K的较大温度范围内，电阻率受三维可变范围跳变机制支配。光学实验表明，小光学间隙E_（go）≈200 meV出现，Ir 5d-分裂t_（2g）歧管。低于3 T和25 K的正磁致电阻显示出较弱的抗定位作用。

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《Physical review》 |2013年第4期|045111.1-045111.6|共6页
作者
Marcus Jenderka; Jose Barzola-Quiquia; Zhipeng Zhang; Heiko Frenzel; Marius Grundmann; Michael Lorenz;
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Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig, Germany;

Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig, Germany;

Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig, Germany;

Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig, Germany;

Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig, Germany;

Institut fuer Experimentelle Physik Ⅱ, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig, Germany;

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1. Crossover between Mott and Efros-Shklovskii variable-range hopping in Sr_2lrO_4 epitaxial thin films by misfit strain and isovalent doping [J] . Souri M., Connell J. G., Nichols J., Journal of Applied Physics . 2019,第18期

机译：MOTT和EFROS-SHKLOVSKII之间的交叉在SR_2LRO_4外延薄膜中的可变范围跳跃，由不合格菌株和具有依托掺杂
2. Transition between Efros-Shklovskii and Mott variable-range hopping conduction in polycrystalline germanium thin films [J] . Li Zhaoguo, Peng Liping, Zhang Jicheng, Semiconductor science and technology . 2017,第3期

机译：多晶锗薄膜中Efros-Shklovskii与Mott变程跳跃传导之间的过渡
3. MAGNETIC-FIELD-INDUCED CROSSOVER FROM MOTT VARIABLE-RANGE HOPPING TO WEAKLY INSULATING BEHAVIOR [J] . Friedman JR., Dai PH., Sarachik MP., Physical Review, B. Condensed Matter . 1996,第15期

机译：磁场引起的交叉，从MOTT可变范围跳跃到弱绝缘行为
4. VARIABLE-RANGE HOPPING VERSUS INTER-GRAIN TUNNELING IN Cu_2ZnSn(S_xSe_(1-x))_4 THIN-FILMS PREPARED BY SPRAY PYROLYSIS [C] . K. G. Lisunov, L. Bruc, M. Rusu, European Photovoltaic Solar Energy Conference and Exhibition . 2016

机译：通过喷雾热解制备的可变范围跳跃与谷物中的谷物间隧穿（S_XSE_（1-x））_ 4薄膜
5. 2D Mott Hopping of Vortices in an Amorphous Indium Oxide Film [D] . Percher, Ilana Michele. 2018

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6. Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films [O] . Huichao Wang, Haiwen Liu, Cui-Zu Chang, -1

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7. Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films [O] . Jenderka, Marcus, Barzola-Quiquia, José, Zhang, Zhipeng, 2013

机译：mott可变范围跳变和弱无线化效应异质外延Na2IrO3薄膜

Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na_2IrO_3 thin films

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