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首页> 外文期刊>Physical review >Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface
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Magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator interface

机译：三维拓扑绝缘体/磁绝缘体界面处的磁邻近效应

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摘要

The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality. Within density functional theory we study magnetic proximity effect at the three-dimensional topological insulator/magnetic insulator (TI/MI) interface in the Bi_2Se_3/MnSe(111) system as an example. We demonstrate that a gapped ordinary bound state caused by the interface potential arises in the immediate region of the interface. The gapped topological Dirac state also arises in the system owing to relocation to deeper atomic layers of topological insulator. The gap in the Dirac cone originates from an overlapping of the topological and ordinary interfacial states. This result being also corroborated by the analytic model, is a key aspect of the magnetic proximity effect mechanism in the TI/MI structures.
机译：磁性邻近效应是由拓扑绝缘体和磁性材料层组成的异质结构的基本特征，因为它在具有新颖量子功能的设备中具有许多潜在应用。在密度泛函理论中，我们以Bi_2Se_3 / MnSe（111）系统中的三维拓扑绝缘体/磁绝缘体（TI / MI）界面研究磁邻近效应。我们证明了由界面电位引起的带间隙的普通结合态出现在界面的紧邻区域中。由于重新定位到拓扑绝缘体的较深原子层，系统中也出现了空位拓扑狄拉克态。狄拉克锥的间隙源自拓扑和普通界面态的重叠。分析模型也证实了这一结果，这是TI / MI结构中磁性接近效应机制的关键方面。

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  • 来源
    《Physical review》 |2013年第14期|144430.1-144430.5|共5页
  • 作者

    S. V. Eremeev; V. N. Menshov; V. V. Tugushev; P. M. Echenique; E. V. Chulkov;

  • 作者单位

    Institute of Strength Physics and Materials Science, 634021 Tomsk, Russia,Tomsk State University, 634050 Tomsk, Russia;

    Tomsk State University, 634050 Tomsk, Russia,NRC Kurchatov Institute, Kurchatov Sqr. 1,123182 Moscow, Russia;

    Tomsk State University, 634050 Tomsk, Russia,NRC Kurchatov Institute, Kurchatov Sqr. 1,123182 Moscow, Russia,Prokhorov General Physics Institute, Vavilov Str. 38,119991 Moscow, Russia;

    Donostia International Physics Center (DIPC), 20018 San Sebastian/Donostia, Basque Country, Spain,Departamento de Fisica de Materiales UPVIEHU, Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPVIEHU, 20080 San SebastidnlDonostia, Basque Country, Spain;

    Tomsk State University, 634050 Tomsk, Russia,Donostia International Physics Center (DIPC), 20018 San Sebastian/Donostia, Basque Country, Spain,Departamento de Fisica de Materiales UPVIEHU, Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPVIEHU, 20080 San SebastidnlDonostia, Basque Country, Spain;

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  • 正文语种 eng
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  • 关键词

    electron states at surfaces and interfaces; magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields;

    机译：表面和界面的电子态;磁电子学自旋电子学：利用自旋极化传输或集成磁场的设备;

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