Memory effect in low-density amorphous silicon under pressure

Nandini Garg; K. K. Pandey; K. V. Shanavas; C. A. Betty; Surinder M. Sharma

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Memory effect in low-density amorphous silicon under pressure

机译：低密度非晶硅在压力下的记忆效应

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Our investigations on porous Si (π-Si) show that on increase of pressure it undergoes crystalline phase transitions instead of pressure-induced amorphization, as suggested earlier, and the amorphous phase appears only on release of pressure. This amorphous phase, when subjected to higher pressures, transforms reversibly to a higher-coordinated primitive hexagonal phase, showing a kind of memory effect which may be the only example of its kind in the elemental solids. First-principles calculations and thermodynamic arguments help understand these observations.

机译：我们对多孔硅（π-Si）的研究表明，随着压力的增加，它会经历晶相转变，而不是如先前所建议的那样由压力引起的非晶化，并且非晶相仅在压力释放时出现。当受到较高压力时，该非晶相可逆地转变为较高配位的原始六方相，显示出一种记忆效应，可能是其在元素固体中的唯一例子。第一性原理计算和热力学论点有助于理解这些观察结果。

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来源
《Physical review》 |2011年第11期|p.115202.1-115202.6|共6页
作者
Nandini Garg; K. K. Pandey; K. V. Shanavas; C. A. Betty; Surinder M. Sharma;
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作者单位

High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India;

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structural transitions in nanoscale materials;

机译：纳米级材料的结构转变;

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专利

1. Amorphous silicon/amorphous silicon carbide heterojunctions applied to memory device structures [J] . Sakata I., Yamanaka M. Electronics Letters . 1994,第9期

机译：应用于存储器件结构的非晶硅/非晶碳化硅异质结
2. Improvement of memory window and retention with low trap density in hydrogenated-amorphous-silicon- germanium nonvolatile memory [J] . Woojin Choi, Kyungsoo Jang, Jayapal Raja, Semiconductor science and technology . 2013,第3期

机译：氢化非晶硅锗非易失性存储器的存储器窗口和低陷阱密度的保留得以改善
3. Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide [J] . K. Gacem, A. El Hdiy, M. Troyon, Journal of Applied Physics . 2007,第9期

机译：二氧化硅中嵌入无定形硅中的锗纳米晶体中的记忆和库仑阻挡效应
4. Development of p-type Amorphous Silicon Oxide - Nano Crystalline Silicon Double Layer and its Application in n-i-p Type Amorphous Silicon Solar Cell [C] . Sangho Kim, S. M. Iftiquar, Jinjoo Park, IEEE Photovoltaic Specialist Conference . 2017

机译：P型无定形氧化硅 - 纳米晶体双层的研制及其在N-I-P型非晶硅太阳能电池中的应用
5. A magnetic resonance investigation of trivalent silicon centers in amorphous silicon dioxide and amorphous silicon nitride. [D] . Warren, William Leo. 1990

机译：非晶态二氧化硅和非晶态氮化硅中三价硅中心的磁共振研究。
6. Pressure-induced reversible amorphization and an amorphous–amorphous transition in Ge2Sb2Te5 phase-change memory material [O] . Zhimei Sun, Jian Zhou, Yuanchun Pan, 2011

机译：Ge2Sb2Te5相变存储材料中的压力诱导可逆非晶化和非晶-非晶过渡
7. Memory effect under pressure in low density amorphous silicon [O] . Garg, Nandini, Pandey, K. K., Shanavas, K. V., 2010

机译：低密度非晶硅在压力下的记忆效应

Memory effect in low-density amorphous silicon under pressure

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