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Persistence of superconductivity in niobium ultrathin films grown on R-plane sapphire

机译:R平面蓝宝石上生长的铌超薄膜中超导的持久性

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We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultrahigh vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the thinnest films, showing that heteroepitaxy is not achieved under a thickness of 3.3 nm, which almost coincides with the first measurement of a superconducting state. The superconducting critical temperature rise takes place on a very narrow thickness range, of the order of a single monolayer (ML). The thinnest superconducting sample (3 nm/9 ML) has an offset critical temperature above 4.2 K and can be processed by standard nanofabrication techniques to generate air- and time-stable superconducting nanostructures, useful for quantum devices.
机译:我们报告了在原子平面R平面蓝宝石晶片上超高真空下沉积的铌超薄膜(2至10 nm)的组合结构和电子分析结果。在最薄的薄膜上观察到织构的多晶形态,表明在3.3 nm的厚度下未实现异质外延,这几乎与超导状态的首次测量相符。超导临界温度上升发生在非常狭窄的厚度范围内,约为单层(ML)。最薄的超导样品(3 nm / 9 ML)的临界温度偏移高于4.2 K,可以通过标准的纳米制造技术进行处理,以生成对量子器件有用的空气和时间稳定的超导纳米结构。

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