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Low-temperature irradiation-induced defects in p-type germanium

机译：p型锗的低温辐照诱导缺陷

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摘要

Besides two well-known dominant peaks, which have been earlier correlated with the single monovucancy and gallium interstitial defect, a number of small lines appear in deep level transient spectroscopy (DLTS) spectra measured in situ after particle irradiation at low temperatures in p-type germanium. Three of the most pronounced have been studied to some detail in the present investigation by combining DLTS and high-resolution Laplace DLTS. These three lines are called H70, H280 and H290. where the H refers to their hole-trap nature, and the numbers to their apparent enthalpy for hole emission relative to the valence-band edge. The H70 trap is most probably a primary defect, and its observed energy level is found to be an acceptor level. Possible defects related to these DLTS lines are discussed with special emphasis on the divacancy defect in germanium.
机译：除了两个众所周知的显性峰（已与单个单孔和镓间隙缺陷相关）外，在低温下对p型粒子进行辐照后，在深层瞬态光谱（DLTS）光谱中现场测量了许多细线锗。通过组合DLTS和高分辨率Laplace DLTS，在本次调查中对最明显的三个进行了详细研究。这三条线称为H70，H280和H290。其中H表示空穴陷阱的性质，数字表示相对于价带边缘的空穴发射的表观焓。 H70阱很可能是主要缺陷，发现其能级为受体能级。讨论了与这些DLTS线有关的可能缺陷，并特别强调了锗的空位缺陷。

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  • 来源
    《Physical review》 |2010年第3期|035208.1-035208.6|共6页
  • 作者

    VI. Kolkovsky; M. Christian Petersen; A. Mesli; A. Nylandsted Larsen;

  • 作者单位

    Institut fur Angewandte Physik, Technische Universitaet, Dresden, Germany;

    Department of Physics and Astronomy, University of Aarhus, DK 8000 Aarhns C, Denmark;

    Institut d'Electronique du Solide et des Systemes, CNRS/ULP, Strasbourg, France;

    Department of Physics and Astronomy, University of Aarhus, DK 8000 Aarhns C, Denmark;

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  • 正文语种 eng
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  • 关键词

    semiconductors;

    机译：半导体;

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