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首页> 外文期刊>Physical review >Low-temperature Irradiation-induced Defects In Germanium: In Situ Analysis
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Low-temperature Irradiation-induced Defects In Germanium: In Situ Analysis

机译：低温辐照引起的锗缺陷：原位分析

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The electronic properties of defects resulting from electron irradiation of germanium at low temperatures have been investigated. The recent success in preparing n~+p junctions on germanium has opened a new opportunity to address fundamental questions regarding point defects and their related energy levels by allowing an access to the lower half of the band gap. In this work we apply various space-charge capacitance-transient spectroscopy techniques connected on line with the electron-beam facility. In n-type germanium we identify a level at about 0.14 eV below the conduction band whose properties resemble in many respects those of a defect assigned previously to the close vacancy-interstitial or Frenkel pair. This pair seems to annihilate over a small barrier at about 70 K, and its stability is particularly sensitive to the irradiation temperature and energy. We also observe two coupled levels at 0.08 and 0.24 eV below the conduction band stable up to 160 K. Recent independent theoretical work has predicted the existence of the single and double donor of the germanium interstitial with energy levels matching exactly these two values. Given these identifications hold, they mark a major difference with silicon where both the Frenkel pair and self-interstitial have never been caught. In p-type germanium, two levels were found. The shallower one, located at about 0.14 eV above the valence band, is tentatively assigned to the vacancy. It exhibits a field-driven instability at about 80 K making its analysis quite difficult. The application of a reverse bias, required by the space-charge spectroscopy, leads to a strong drift process sweeping this defect out of the observation area without necessarily provoking its annealing. Unlike silicon, in which the vacancy has four charge states, only one vacancy-related level seems to exist in germanium and this level is very likely a double acceptor. Finally, a very peculiar observation is made on a hole midgap trap, which, in many respects, behaves as the boron interstitial in silicon. This has led us to suggest that it may stem from the gallium interstitial, a natural dopant of our germanium materials, whose presence would be the fingerprint of the Watkins replacement mechanism in germanium.
机译：已经研究了由锗在低温下电子辐照导致的缺陷的电子性质。最近在锗上制备n〜p结的成功开辟了一个新的机会，即通过允许进入带隙的下半部来解决有关点缺陷及其相关能级的基本问题。在这项工作中，我们采用了与电子束设备在线连接的各种空间电荷电容瞬态光谱技术。在n型锗中，我们确定了一个比导带低约0.14 eV的能级，该能带的特性在很多方面类似于先前分配给紧密的空位间隙或Frenkel对的缺陷。这对金属似乎在大约70 K的小壁垒上an灭，其稳定性对照射温度和能量特别敏感。我们还观察到在高达160 K的导带以下，在0.08和0.24 eV处的两个耦合能级稳定。最近的独立理论工作已经预测了锗填隙的单和双施主的存在，其能级与这两个值完全匹配。鉴于这些标识成立，它们标志着与硅之间的重大区别，而Frenkel对和自填隙子都从未被发现过。在p型锗中，发现了两个水平。较浅的一个位于价带上方约0.14 eV，暂时分配给该空位。它表现出大约80 K的磁场驱动的不稳定性，因此很难进行分析。空间电荷光谱法所要求的反向偏压的施加导致了强漂移过程，从而将该缺陷扫出了观察区域，而不必引起其退火。与硅中的空位具有四个电荷状态不同，锗似乎只存在一个与空位有关的能级，而该能级很可能是双重受体。最后，在空穴中带隙陷阱上进行了非常特殊的观察，该陷阱在许多方面都表现为硅中的硼间隙。这导致我们建议它可能源于我们的锗材料的一种自然掺杂物-镓间隙，它的存在就是锗中沃特金斯置换机制的指纹。

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