Heterointerface effects on the charging energy of the shallow D~- ground state in silicon: Role of dielectric mismatch

著录项

• 来源
  《Physical review》 |2010年第7期|p.075317.1-075317.7|共7页
• 作者

  M. J. Calderon; J. Verduijn; G. P. Lansbergen; G. C. Tettamanzi; S. Rogge; Belita Koiller;

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• 作者单位

  Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain;

  rnKavli Institute of Nanoscience, Delft University of Technology, Lorentzweg I, 2628 CJ Delft, The Netherlands;

  rnKavli Institute of Nanoscience, Delft University of Technology, Lorentzweg I, 2628 CJ Delft, The Netherlands;

  rnKavli Institute of Nanoscience, Delft University of Technology, Lorentzweg I, 2628 CJ Delft, The Netherlands;

  rnKavli Institute of Nanoscience, Delft University of Technology, Lorentzweg I, 2628 CJ Delft, The Netherlands;

  rnInstituto de Fisica, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, 21941-972 Rio de Janeiro, RJ, Brazil;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  semiconductor devices; quantum computation; impurity and defect levels; energy states of adsorbed species; single electron devices;

  机译：半导体器件;量子计算杂质和缺陷水平;吸附物质的能量状态;单电子器件;