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Isotope effect on electron paramagnetic resonance of boron acceptors in silicon

机译：同位素对硅中硼受体电子顺磁共振的影响

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摘要

The fourfold degeneracy of the boron acceptor ground state in silicon, which is easily lifted by any symmetry-breaking perturbation, allows for a strong inhomogeneous broadening of the boron-related electron paramagnetic resonance (EPR) lines, e.g., by a random distribution of local strains. However, since EPR of boron acceptors in externally unstrained silicon was reported initially, neither the line shape nor the magnitude of the residual broadening observed in samples with high-crystalline purity were compatible with the low concentrations of carbon and oxygen point defects, being the predominant source of random local strain. Adapting a theoretical model which has been applied to understand the acceptor ground-state splitting in the absence of a magnetic field as an effect due to the presence of different silicon isotopes, we show that local fluctuations of the valence-band edge due to different isotopic configurations in the vicinity of the boron acceptors can quantitatively account for all inhomogeneous broadening effects in high-purity Si with a natural isotope composition. Our calculations show that such an isotopic perturbation also leads to a shift in the g value of different boron-related resonances, which we could verify in our experiments. Further, our results provide an independent test and verification of the valence-band offsets between the different Si isotopes determined in previous works.
机译：硅中硼受体基态的四倍简并可以通过任何破坏对称性的扰动轻易地消除，从而使硼相关的电子顺磁共振（EPR）谱线发生强烈的不均匀展宽，例如通过局部随机分布株。但是，由于最初报道了外部未应变硅中硼受体的EPR，因此在高结晶纯度的样品中观察到的线形或残留展宽的幅度都与低浓度的碳和氧点缺陷相容，这是主要的随机局部应变的来源。调整已应用于理解在没有磁场的情况下受主基态分裂的理论模型，作为由于存在不同硅同位素而产生的影响，我们证明了由于不同同位素引起的价带边缘的局部波动硼受体附近的构型可以定量地解释具有天然同位素组成的高纯度Si中所有不均匀的扩展作用。我们的计算表明，这种同位素扰动还会导致不同硼相关共振的g值发生变化，我们可以在实验中进行验证。此外，我们的结果提供了对先前工作中确定的不同Si同位素之间价带偏移的独立测试和验证。

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  • 来源
    《Physical review》 |2010年第11期|p.115213.1-115213.11|共11页
  • 作者

    A. R. Stegner; rnH. Tezuka; rnT. Andlauer; rnM. Stutzmann; rnM. L. W. Thewalt; rnM. S. Brandt; rnK. M. Itoh;

  • 作者单位

    Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany;

    rnSchool of Fundamental Science and Technology, Keio University, Yokohama 223-8522, Japan;

    rnWalter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany;

    rnWalter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany;

    rnDepartment of Physics, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6;

    rnWalter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching, Germany;

    rnSchool of Fundamental Science and Technology, Keio University, Yokohama 223-8522, Japan;

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  • 正文语种 eng
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  • 关键词

    color centers and other defects; elemental semiconductors;

    机译：色心和其他缺陷;元素半导体;

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