Engineering self-assembled SiGe islands for robust electron confinement in Si

R. O. Rezaev; S. Kiravittaya; V. M. Fomin; A. Rastelli; O. G. Schmidt

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Engineering self-assembled SiGe islands for robust electron confinement in Si

机译：工程自组装SiGe岛用于在Si中稳健地限制电子

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The confinement potential and the energy of localized electron states in the Si matrix surrounding self-assembled SiGe/Si(001) islands are evaluated with realistic structural parameters. For homogeneously alloyed islands overgrown with Si at low substrate temperatures, a nonmonotonic dependence of the energy levels on size and composition is obtained and conditions to achieve the deepest confinement potential are derived within the available parameters. The influence of the experimentally reported composition distributions on the electron confinement is considered and confined states are found to lie as deep as 120 meV below the Si A conduction-band edge. Finally, shape changes occurring during Si capping at high substrate temperatures are shown to lead to a substantial reduction in the confinement potential. This work guides the design of structures able to provide robust single-electron confinement in Si.

机译：利用实际的结构参数评估了围绕自组装SiGe / Si（001）岛的Si矩阵中的局限势和局部电子态的能量。对于在低衬底温度下长满Si的均匀合金岛，获得了能级对尺寸和组成的非单调依赖性，并在可用参数范围内得出了实现最大限制电位的条件。考虑了实验报道的组成分布对电子限制的影响，发现限制状态位于Si A导带边缘以下120 meV的深度。最后，显示出在高衬底温度下在硅覆盖期间发生的形状变化导致限制电位的显着降低。这项工作指导了能够在Si中提供可靠的单电子约束的结构设计。

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来源
《Physical review》 |2010年第15期|p.153306.1-153306.4|共4页
作者
R. O. Rezaev; S. Kiravittaya; V. M. Fomin; A. Rastelli; O. G. Schmidt;
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作者单位

Institute for Integrative Narwsciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany,Laboratory of Mathematical Physics, Tomsk Polytechnic University, Lenin Avenue 30, Tomsk 634050, Russia;

Institute for Integrative Narwsciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany;

Institute for Integrative Narwsciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany;

Institute for Integrative Narwsciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany;

Institute for Integrative Narwsciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany;

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正文语种 eng
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quantum dots,strain-induced splitting;

机译：量子点;应变诱导分裂;

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1. SiGe nanostructures with self-assembled islands for Si-based optoelectronics [J] . Z F Krasilnik, A V Novikov, D N Lobanov, Semiconductor science and technology . 2011,第1期

机译：具有硅基自组装岛的SiGe纳米结构
2. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures [J] . Yablonskiy A.N., Baidakova N.A., Novikov A.V., Semiconductors . 2013,第11期

机译：多层SiGe / Si和SiGe / SOI结构中自组装Ge（Si）岛的时间分辨光致发光
3. Band-edge alignment of SiGe/Si quantum wells and SiGe/Si self-assembled islands [J] . M. El Kurdi, S. Sauvage, G. Fishman, Physical review. B, Condensed Matter And Materials Physics . 2006,第19期

机译：SiGe / Si量子阱和SiGe / Si自组装岛的带边缘对准
4. Simulations of Quantum Confinement in Self-Assembled InAs/GaAs Island Quantum Dot Arrays [C] . A. F. Bower, V. Nguyen, H.T. Johnson Symposium on Semiconductor Quantum Dots . 2001

机译：自组装INAS / GAAS岛量子点阵列中量子限制模拟
5. Modeling and simulation of compositional engineering in SiGe films using patterned stress fields. [D] . Kaiser, Daniel. 2016

机译：使用构图应力场对SiGe薄膜中的成分工程进行建模和仿真。
6. Anisotropic Confinement Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots [O] . L Villegas-Lelovsky, MD Teodoro, V Lopez-Richard, 2011

机译：自组装量子点的价带各向异性检测各向异性各向异性电子耦合和应变诱导效应
7. Photoluminescence of SiGe/Si(001) self-assembled islands grown on strained Si/sub 1-x/Ge/sub x/ layer [O] . D.N. Lobanov, A.V. Novikov, M.V. Shaleev, -1

机译：SiGe / Si（001）的光致发光在紧张Si / sub 1-x / ge / sub x /层上生长的自组装岛
8. Generating Robust Parsers Using Island Grammars; Software engineering rept [R] . Moonen, L. M. F. 2001

机译：使用岛屿语法生成鲁棒的解析器;软件工程部

Engineering self-assembled SiGe islands for robust electron confinement in Si

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