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首页> 外文期刊>Semiconductors >Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures
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Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

机译：多层SiGe / Si和SiGe / SOI结构中自组装Ge（Si）岛的时间分辨光致发光

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摘要

The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and "silicon-on-insulator" substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of ～100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on "silicon-on-insulator" substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.
机译：研究具有在硅和“绝缘体上硅”衬底上生长的自组装Ge（Si）岛的多层结构与温度和激发光的光致发光（PL）的光谱和时间特性的结果波长。当温度从4 K增加到70 K时，对于在硅衬底上生长的Ge（Si）岛的结构，观察到岛相关PL强度的显着增加。这种增加是由于非平衡载流子从硅衬底扩散到硅衬底中。与岛屿的活动层。在这种情况下，PL上升动力学中会出现一个特征时间约为100 ns的慢速分量。同时，在“绝缘体上硅”衬底上生长的结构中，没有观察到PL上升动力学中缓慢的成分，也没有观察到PL强度随温度升高而上升，其中带有岛的有源层与绝缘体绝缘。硅基板。已经发现，在亚带隙光学泵浦条件下，岛和SiGe湿润层中激发光的吸收主要有助于激发来自岛的PL信号。

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