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机译:n型拓扑绝缘体超薄Bi_2Se_3薄膜中的反常传输
Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;
Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;
Synchrotron Radiation Laboratory, ISSP, University of Tokyo, Kashiwa 277-8581, Japan;
UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585, Japan;
UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585, Japan;
Synchrotron Radiation Laboratory, ISSP, University of Tokyo, Kashiwa 277-8581, Japan;
Synchrotron Radiation Laboratory, ISSP, University of Tokyo, Kashiwa 277-8581, Japan;
Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;
electron states at surfaces and interfaces,insulators;
机译:在MgO(100),Cr_2O_3(0001)和Al_2O_3(0001)模板上生长的外延拓扑绝缘体Bi_2Se_3薄膜的微观结构和传输特性
机译:拓扑绝缘体Bi_2Se_3薄膜中与厚度无关的传输通道
机译:拓扑绝缘体Bi_2Te_3和Bi_2Se_3的薄膜的平面内传输和增强的热电性能
机译:激光能量密度对高度取向拓扑绝缘体生长的作用Bi_2se_3薄膜
机译:探测拓扑绝缘体薄膜和拓扑绝缘体/铁磁体(TI / FM)异质结构表面状态的磁传输方法。
机译:超薄拓扑绝缘膜在磁场中的量子电容
机译:薄膜内的平面传输和增强的热电性能 拓扑绝缘体Bi_2Te_3和Bi_2se_3