...
首页> 外文期刊>Physical review >Anomalous transport in an n-type topological insulator ultrathin Bi_2Se_3 film
【24h】

Anomalous transport in an n-type topological insulator ultrathin Bi_2Se_3 film

机译:n型拓扑绝缘体超薄Bi_2Se_3薄膜中的反常传输

获取原文
获取原文并翻译 | 示例
           

摘要

We have performed in situ spin- and angle-resolved photoemission and ex situ magnetotransport measurements on ultrathin topological insulator Bi_2Se_3 films. The surface states deviate from a simple isotropic Dirac fermion due to hexagonal warping effects and their spin helical nature has been verified. In addition, the bulk states also cross the Fermi level, showing that the films are actually n doped. However, the temperature dependence of the film resistivity was insulating and saturated below 35 K. Furthermore, the magnetoresistivity changed drastically as the sample was cooled down and showed an anomaly near zero field below 20 K. The possible origin of this peculiar behavior and the nature of the carriers involved are discussed in comparison with the results for nonmetallic bulk samples.
机译:我们已经对超薄拓扑绝缘体Bi_2Se_3薄膜进行了原位自旋和角度分辨光发射以及非原位磁传输测量。由于六边形翘曲效应,表面状态不同于简单的各向同性狄拉克费米子,并且已经验证了它们的自旋螺旋性质。此外,体态也越过费米能级,表明该膜实际上是n掺杂的。但是,薄膜电阻率的温度依赖性在35 K以下是绝缘且饱和的。此外,随着样品的冷却,磁阻急剧变化,并且在20 K以下显示出零场附近的异常。这种特殊行为和性质的可能起因与非金属散装样品的结果进行了比较,讨论了所涉及的载体的种类。

著录项

  • 来源
    《Physical review》 |2010年第15期|p.155309.1-155309.6|共6页
  • 作者单位

    Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

    Synchrotron Radiation Laboratory, ISSP, University of Tokyo, Kashiwa 277-8581, Japan;

    UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585, Japan;

    UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585, Japan;

    Synchrotron Radiation Laboratory, ISSP, University of Tokyo, Kashiwa 277-8581, Japan;

    Synchrotron Radiation Laboratory, ISSP, University of Tokyo, Kashiwa 277-8581, Japan;

    Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    electron states at surfaces and interfaces,insulators;

    机译:表面和界面;绝缘体的电子态;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号