Fluctuating charge-density waves in the Hubbard model

Alexei Sherman; Michael Schreiber

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Fluctuating charge-density waves in the Hubbard model

机译：Hubbard模型中波动的电荷密度波

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The charge susceptibility of the two-dimensional repulsive Hubbard model is investigated by using the diagram technique developed for the case of strong correlations. In this technique, a power series in the hopping constant is used. It is shown that once

机译：通过使用针对强相关情况开发的图技术，研究了二维斥力哈伯德模型的电荷敏感性。在该技术中，使用跳变常数中的幂级数。显示一次

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《Physical review》 |2008年第15期|254-260|共7页
作者
Alexei Sherman; Michael Schreiber;
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正文语种 eng
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lattice fermion models (hubbard model, etc.); strongly correlated electron systems; heavy fermions; 71.45.Lr; 74.25.Kc;

机译：格子费米子模型（哈伯德模型等）;强相关电子系统;重费米子71.45.Lr;74.25;

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1. Charge-density waves and surface Mott insulators for adlayer structures on semiconductors: Extended Hubbard modeling [J] . Santoro G., Tosatti E., Scandolo S. Physical Review, B. Condensed Matter . 1999,第3期

机译：用于半导体上的附加层结构的电荷密度波和表面Mott绝缘体：扩展的Hubbard建模
2. Charge-density waves and surface Mott insulators for adlayer structures on semiconductors: Extended Hubbard modeling [J] . Santoro G., Tosatti E., Scandolo S. Physical Review, B. Condensed Matter . 1999,第3期

机译：用于半导体上的附加层结构的电荷密度波和表面Mott绝缘体：扩展的Hubbard建模
3. Superconductivity, charge-density waves, antiferromagnetism, and phase separation in the Hubbard-Holstein model [J] . Seher Karakuzu, Luca F. Tocchio, Sandra Sorella, Physical review. B, Condensed Matter And Materals Physics . 2017,第20期

机译：Hubbard-Holstein模型中的超导电性，电荷密度波，反铁磁性和相分离
4. Occupancy Fluctuation Effect on Metal-Insulator Transition in 3D Hubbard Model within Dynamical Mean-Field Theory Framework [C] . M.G.A. Al Anshori, C.N. Rangkuti, M.A. Majidi International Conference on Condensed Matters and Advanced Materials . 2019

机译：动态平均场理论框架中3D Hubbard模型中金属绝缘子过渡的占用波动效应
5. Charge-density wave transport properties in microwave and millimeter-wave spectral range [D] . Kim, Tae Wan 1990

机译：微波和毫米波光谱范围内的电荷密度波传输特性
6. Critical points of the three-dimensional Bose-Hubbard model from on-site atom number fluctuations [O] . Oskar A. Prośniak, Mateusz Łącki, Bogdan Damski -1

机译：三维Bose-Hubbard模型的临界点（基于现场原子数波动）
7. Charge-density waves and surface Mott insulators for adlayer structures on semiconductors: Extended Hubbard modeling [O] . Giuseppe E. Santoro, Sandro Scandolo, Erio Tosatti 1999

机译：用于半导体上的附加层结构的电荷密度波和表面Mott绝缘体：扩展的Hubbard建模

Fluctuating charge-density waves in the Hubbard model

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