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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition
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Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

机译：金属有机化学气相沉积法生长异质外延GaN中位错和相关缺陷的统计光致发光

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摘要

Heteroepitaxial GaN films in general have very high concentration of defects and at the same time show broad photoluminescence (PL) peaks at energies below the band-gap energy (3.4 eV), i.e., the so-called yellow (YL) and blue luminescence (BL) centered at 2.2 and 2.9 eV, respectively. The origin of these PL peaks is commonly attributed to defects. The present paper studies the relationship of the yellow and blue luminescence with the defect structure by a combination of photoetching and photoluminescence. Nominally undoped (n-type) GaN layers were grown by metal organic chemical vapor deposition (MOCVD). By photoetching the perfect material between defects is removed and defect-related nanocolumns are formed. PL measurements of samples etched to various degrees allow the identification of the different PL features. A fully etched sample shows no PL signature related to any of the band edge features and BL is quenched completely, while the yellow luminescence is attenuated only to the degree to which the volume amount of GaN has been removed. Such behavior suggests that defects causing YL are not related to dislocations but are rather homogenously distributed throughout the layer in the form of point-like defects. The decrease of the BL intensity at 4.4 K with excitation dose (bleaching) and the simultaneous increase in YL intensity for as-grown samples and the lack of such effects for etched samples imply a direct connection between the defect centers responsible for YL and BL.
机译：异质外延GaN膜通常具有非常高的缺陷浓度，同时在低于带隙能量（3.4 eV）的能量处显示宽的光致发光（PL）峰，即所谓的黄色（YL）和蓝色发光（ BL）分别以2.2 eV和2.9 eV为中心。这些PL峰的起源通常归因于缺陷。本文通过光蚀刻和光致发光的结合研究了黄光和蓝光与缺陷结构的关系。通过金属有机化学气相沉积（MOCVD）生长名义上不掺杂的（n型）GaN层。通过光蚀刻，去除缺陷之间的理想材料，并形成与缺陷相关的纳米柱。蚀刻到不同程度的样品的PL测量可以识别不同的PL特征。完全蚀刻的样品没有显示与任何带边缘特征有关的PL标记，并且BL被完全淬灭，而黄色发光仅衰减到GaN体积已被去除的程度。这种行为表明导致YL的缺陷与位错无关，而是以点状缺陷的形式均匀地分布在整个层中。随着激发剂量（漂白），在4.4 K处的BL强度降低，而对于生长中的样品，YL强度同时增加，而对于蚀刻后的样品则缺乏这种影响，这意味着负责YL和BL的缺陷中心之间存在直接联系。

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