Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates byMetal-organic Chemical-vapor Deposition

Young S. PARK; Y. H. KWON; Hyunsik IM; Woong JUNG; Hyungsang KIM; Minseon KIM; W. C. YANG; Junho LEE; Hong Goo CHOI; Cheong Hyun ROH; Cheol-Koo HAHN

首页> 外文期刊>Journal of the Korean Physical Society >Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates byMetal-organic Chemical-vapor Deposition

【24h】

Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates byMetal-organic Chemical-vapor Deposition

机译：金属有机化学气相沉积法在Si（100）衬底上生长的GaN外延层中的位错缺陷

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Dislocation defects in GaN epilayers grown on Si substrates were investigated using cathodolu-minescence (CL) and atomic force microscopy (AFM). The dislocation densities of the films were deduced from two-dimensional CL image measurements and ranged from 1 x 10~(11) cm~(-2) to 5 x 10~(11) cm~(-2). These values are larger than those reported for GaN epilayers grown on sapphire substrates. The surface morphology and dislocations in the GaN epilayers were investigated by using AFM. From a comparative study of the CL and the AFM measurements, the GaN epilayers with lower dislocation densities are seen to have good surface morphologies with smaller densities of surface defects

机译：使用阴极发光（CL）和原子力显微镜（AFM）研究了在Si衬底上生长的GaN外延层中的位错缺陷。薄膜的位错密度由二维CL图像测量得出，范围为1 x 10〜（11）cm〜（-2）到5 x 10〜（11）cm〜（-2）。这些值大于报道的在蓝宝石衬底上生长的GaN外延层的值。利用原子力显微镜研究了GaN外延层的表面形貌和位错。通过对CL和AFM测量的比较研究，发现位错密度较低的GaN外延层具有良好的表面形态，表面缺陷的密度较小

著录项

来源
《Journal of the Korean Physical Society》 |2010年第4期|共4页
作者
Young S. PARK; Y. H. KWON; Hyunsik IM; Woong JUNG; Hyungsang KIM; Minseon KIM; W. C. YANG; Junho LEE; Hong Goo CHOI; Cheong Hyun ROH; Cheol-Koo HAHN;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
Dislocation defects; Cathodoluminescence; GaN;

机译：位错缺陷;阴极发光;GaN;

相似文献

外文文献
中文文献
专利

1. Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates byMetal-organic Chemical-vapor Deposition [J] . Young S. PARK, Y. H. KWON, Hyunsik IM, Journal of the Korean Physical Society . 2010,第4期

机译：金属有机化学气相沉积法在Si（100）衬底上生长的GaN外延层中的位错缺陷
2. Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer [J] . Wang JF, Zhang BS, Zhang JC, Chinese physics letters . 2006,第9期

机译：使用GaN中间层减少在Si（111）衬底上生长的GaN外延层中的位错
3. Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer [J] . WANG Jian-Feng, YANG Hui, ZHANG Bao-Shun, 中国物理快报：英文版 . 2006,第009期

机译：使用GaN中间层减少生长在Si（111）衬底上的GaN外延层中的位错
4. Impact of V/III flux ratio and Si-doping concentration on GaN grown by metalorganic chemical-vapor deposition on sapphire substrate [C] . Lay Theng Tan, Peng Chen, Soo Jin Chua . 2002

机译：V / III流量比和Si掺杂浓度对蓝宝石衬底上有机金属化学气相沉积法生长的GaN的影响
5. Defect structures and growth mechanisms of boron arsenide epilayers grown on 6H-silicon carbide and 15R-silicon carbide substrates. [D] . Chen, Hui. 2008

机译：在6H-碳化硅和15R-碳化硅衬底上生长的砷化硼外延层的缺陷结构和生长机理。
6. Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate [O] . Kexiong Zhang, Hongwei Liang, Yang Liu, -1

机译：金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
7. Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Densitym-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate [O] . Munehito Kagaya, Pierre Corfdir, Jean-Daniel Ganière, 2011

机译：用于研究局部载体动力学的时空分离的阴离子发光光谱法在一个独立的GaN衬底上生长的低位位移密度平面中局部载体动力学的频率光谱学研究在0.05ga0.95N中生长
8. High Quality AIN And GaN Epilayers Grown On (00-1) Sapphire, (100), and (111)Silicon Substrates [R] . Kung, P., Saxler, A., Zhang, X., 1995

机译：在（00-1）蓝宝石，（100）和（111）硅衬底上生长的高质量aIN和GaN外延层

Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates byMetal-organic Chemical-vapor Deposition

摘要

著录项

相似文献

相关主题

期刊订阅