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Diamagnetic response of a superconducting surface superstructure: Si(111)-√7 × √3-In

机译：超导表面上部结构的反磁响应：Si（111）-√7×√3-In

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摘要

Macroscopic superconductivity in various ultrathin films at the ultimate two-dimensional limit, i.e., films with thickness of only one- or two-atomic layers supported by single-crystal surfaces, has manifested itself in experiments with only zero resistance but not yet with the Meissner effect due to the lack of a proper in situ technique, although both phenomena are the defining characteristics of a superconductor. Using a self-developed multifunctional scanning tunneling microscope, we succeeded in detecting not only the macroscopic supercurrent but also diamagnetic response of a two-atomic-layer indium film on a Si(111) surface. The diamagnetic measurements reveal that the low-temperature variation of penetration depth follows the BardeenCooper-Schrieffer theory in the dirty limit. The magnitude of the pair-breaking interaction is determined to be 0.80 from the magnetic field dependence of the zero-temperature penetration depth, which implies that the pairing symmetry deviates slightly from an isotropic s wave. The present work demonstrates that it is possible to observe the Meissner effect in ultrathin superconducting films that are vulnerable to air, which is very helpful for a detailed understanding of the microscopic pairing mechanism.
机译：在极限二维极限下，各种超薄膜的宏观超导性，即只有单原子表面支撑的一或两个原子层的厚度的薄膜，在实验中仅表现出零电阻，但在迈斯纳实验中还没有表现出来尽管这两种现象都是超导体的定义特征，但由于缺乏适当的原位技术，这种效应仍然存在。使用自行开发的多功能扫描隧道显微镜，我们不仅成功检测了宏观超电流，而且还成功检测了Si（111）表面上两原子层铟膜的抗磁响应。反磁测量结果表明，渗透深度的低温变化遵循脏极限中的BardeenCooper-Schrieffer理论。根据零温度穿透深度的磁场依赖性，确定成对断开相互作用的幅度为0.80，这意味着成对对称性与各向同性s波略有不同。本工作表明可以在易受空气影响的超薄超导薄膜中观察到迈斯纳效应，这对于详细了解微观配对机理非常有帮助。

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  • 来源
    《Physical review》 |2019年第14期|140506.1-140506.5|共5页
  • 作者

    Wu Yanfu; Duan Ming-Chao; Liu Ningning; Yao Gang; Guan Dandan; Wang Shiyong; Li Yao-Yi; Zheng Hao; Liu Canhua; Jia Jin-Feng;

  • 作者单位

    Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, 800 Dongchuan Rd, Shanghai 200240, Peoples R China;

    Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, 800 Dongchuan Rd, Shanghai 200240, Peoples R China;

    Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, 800 Dongchuan Rd, Shanghai 200240, Peoples R China;

    Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, 800 Dongchuan Rd, Shanghai 200240, Peoples R China;

    Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, 800 Dongchuan Rd, Shanghai 200240, Peoples R China|Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China;

    Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, 800 Dongchuan Rd, Shanghai 200240, Peoples R China|Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, 800 Dongchuan Rd, Shanghai 200240, Peoples R China|Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, 800 Dongchuan Rd, Shanghai 200240, Peoples R China|Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, 800 Dongchuan Rd, Shanghai 200240, Peoples R China|Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China;

    Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ, 800 Dongchuan Rd, Shanghai 200240, Peoples R China|Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China|Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China|Tsung Dao Lee Inst, Shanghai 200240, Peoples R China;

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