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机译:Sn_(1-x)In_xTe中超导间隙函数的微观表征
Department of Applied Physics The University of Tokyo Hongo Bunkyo-ku Tokyo 113-8656 Japan;
The Institute for Solid State Physics The University of Tokyo Kashiwa-shi Chiba 277-8581 Japan;
Department of Physics Tohoku University Miyagi 980-8578 Japan;
Department of Applied Physics The University of Tokyo Hongo Bunkyo-ku Tokyo 113-8656 Japan RIKEN Center for Emergent Matter Science (CEMS) Wako 351-0198 Japan;
RIKEN Center for Emergent Matter Science (CEMS) Wako 351-0198 Japan;
Department of Applied Physics The University of Tokyo Hongo Bunkyo-ku Tokyo 113-8656 Japan RIKEN Center for Emergent Matter Science (CEMS) Wako 351-0198 Japan Tokyo College The University of Tokyo Hongo Bunkyo-ku Tokyo 113-8656 Japan;
机译:电子和空穴对超导系统Sn_(1-x)In_xTe中的态传输的贡献
机译:利用μ自旋光谱研究Sn_(1-x)In_xTe(x = 0.38-0.45)的超导特性
机译:优化Sn_(1-x)In_xTe的超导转变温度和上临界场
机译:年轻的Zr_(O.5)HF_(O.5)COXRH_(1-X)SB_(O.99)SN_(O.01)和ZR_(O.5)HF_(O.5)COXLR_( 1-x)SB_(O.99)SN_(O.01)半风格合金
机译:高临界转变温度超导体的光发射研究:掺杂依赖性,费米表面,超导间隙和金属-超导体界面。
机译:邻近效应在拓扑表面态中的超导间隙– NbSe2 / Bi2Se3超导体-拓扑绝缘子异质结构的点接触光谱研究
机译:拓扑结晶绝缘子的纳米材料, pb_(1-x)sn_(x)Te和pb_(1-x)sn_(x)se
机译:在si(0(le)x(le)上生长的si(sub 1-x)C(sub x)和si(sub 1-x)Ge(sub x)C(sub y)半导体合金的介电函数和带隙0.014)