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Spectral broadening of optical transitions at tunneling resonances in InAs/GaAs coupled quantum dot pairs

机译:INAS / GAAs耦合量子点对隧穿共振的光学转变的光谱扩展

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摘要

We report on line-width analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 μeV is observed at hole tunneling resonances where the coherent tunnel coupling between spatially direct and indirect exciton states is maximized, corresponding to a phonon-assisted transition rate of 150 ns~(-1) at 20 K. With increasing temperature, the linewidth shows broadening characteristic of single-phonon transitions. The linewidth as a function of tunnel coupling strength tracks the theoretical prediction of line-width broadening due to phonon-assisted transitions, and is maximized with an energy splitting between the two exciton branches of 0.8 - 0.9 meV. This report highlights the line-width broadening mechanisms and fundamental aspects of the interaction between these systems and the local environment.
机译:我们报告了INAS / GAAs耦合量子点中光学转换的线宽分析作为偏置电压,温度和隧道耦合强度的函数。在空穴隧道谐振中观察到高达100μEV的显着线,其中空间直接和间接激子状态之间的相干隧道耦合最大化,对应于20k的150ns〜(-1)的声子辅助过渡率。与温度越来越大,线宽显示了单声道过渡的扩大特性。作为隧道耦合强度的函数的线宽跟踪声子辅助转变引起的线宽展宽的理论预测,并且在0.8-0.9mev的两个激子分支之间的能量分裂最大化。本报告突出了线宽拓宽机制和基本方面的这些系统与当地环境之间的相互作用。

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  • 来源
    《Physical review》 |2020年第8期|085423.1-085423.10|共10页
  • 作者单位

    School of Natural Sciences University of California Merced Merced California 95343 USA Stem Cell Instrumentation Foundry University of Merced Merced California 95343 USA;

    School of Natural Sciences University of California Merced Merced California 95343 USA;

    School of Natural Sciences University of California Merced Merced California 95343 USA;

    Naval Research Laboratory Washington DC 20375 USA;

    Naval Research Laboratory Washington DC 20375 USA;

    Naval Research Laboratory Washington DC 20375 USA;

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