Precise control of J_(eff) = 1/2 magnetic properties in Sr_2IrO_4 epitaxial thin films by variation of strain and thin film thickness

Stephan Gepraegs; Bjoern Erik Skovdal; Monika Scheufele; Matthias Opel; Didier Wermeille; Paul Thompson; Alessandro Bombardi; Virginie Simonet; Stephane Grenier; Pascal Lejay; Gilbert Andre Chahine; Diana Lucia Quintero-Castro; Rudolf Gross; Danny Mannix

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Precise control of J_(eff) = 1/2 magnetic properties in Sr_2IrO_4 epitaxial thin films by variation of strain and thin film thickness

机译：通过应变和薄膜厚度的变化，在SR_2IRO_4外延薄膜中精确控制J_（EFF）= 1/2磁性特性

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We report on a comprehensive investigation of the effects of strain and film thickness on the structural and magnetic properties of epitaxial thin films of the prototypal J_(eff) = 1/2 compound Sr_2IrO_4 by advanced x-ray scattering. We find that the Sr_2IrO_4 thin films can be grown fully strained up to a thickness of 108 nm. By using x-ray resonant scattering, we show that the out-of-plane magnetic correlation length is strongly dependent on the thin film thickness, but independent of the strain state of the thin films. This can be used as a finely tuned dial to adjust the out-of-plane magnetic correlation length and transform the magnetic anisotropy from two-dimensional to three-dimensional behavior by incrementing film thickness. These results provide a clearer picture for the systematic control of the magnetic degrees of freedom in epitaxial thin films of Sr_2IrO_4 and bring to light the potential for a rich playground to explore the physics of 5d transition-metal compounds.

机译：我们报告了通过先进的X射线散射通过先进的X射线散射对质量型J_（EFF）= 1/2化合物SR_2IRO_4的外延薄膜结构和磁性的综合调查。我们发现SR_2IRO_4薄膜可以生长完全应变，高达108nm的厚度。通过使用X射线共振散射，我们表明外平面磁性相关长度强烈取决于薄膜厚度，而是与薄膜的应变状态无关。这可以用作精细调谐的拨盘以通过递增膜厚度来调节平面外磁性相关长度并从二维到三维行为转换磁各向异性。这些结果提供了一种更清晰的图片，用于系统控制SR_2IRO_4的外延薄膜中的磁性自由度，并引起富有的游乐场的潜力来探索5D过渡金属化合物的物理学。

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《Physical review.B.Condensed matter and materials physics》 |2020年第21期|214402.1-214402.13|共13页
作者
Stephan Gepraegs; Bjoern Erik Skovdal; Monika Scheufele; Matthias Opel; Didier Wermeille; Paul Thompson; Alessandro Bombardi; Virginie Simonet; Stephane Grenier; Pascal Lejay; Gilbert Andre Chahine; Diana Lucia Quintero-Castro; Rudolf Gross; Danny Mannix;
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Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Gairhing Germany;

Division of Synchrotron Radiation Lund University SE-221 00 Lund Sweden Angstrom Centre Uppsala University SE-75121 Uppsala Sweden;

Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Gairhing Germany Physik-Department Technische Universitaet Muenchen 85748 Garching Germany;

Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Gairhing Germany;

XMaS CRG Beamline European Synchrotron Radiation Facility F-38043 Grenoble France;

XMaS CRG Beamline European Synchrotron Radiation Facility F-38043 Grenoble France;

Diamond Light Source Ltd. Harwell Science & Innovation Campus Didcot OX 11 0DE United Kingdom;

Universite Grenoble Alpes CNRS Grenoble INP Institut Neel 38000 Grenoble France;

Universite Grenoble Alpes CNRS Grenoble INP Institut Neel 38000 Grenoble France;

Universite Grenoble Alpes CNRS Grenoble INP Institut Neel 38000 Grenoble France;

Universite Grenoble Alpes CNRS Grenoble INP SIMaP 38000 Grenoble France;

Department of Mathematics and Physics University of Stavanger 4036 Stavanger Norway;

Walther-Meissner-Institut Bayerische Akademie der Wissenschaften 85748 Gairhing Germany Physik-Department Technische Universitaet Muenchen 85748 Garching Germany Munich Center for Quantum Science and Technology (MCQST) 80799 Munich Germany;

Universite Grenoble Alpes CNRS Grenoble INP Institut Neel 38000 Grenoble France European Spollation Source SE-221 00 Lund Sweden Aarhus University Langelandsgade 140 DK-8000 Aarhus Denmark;

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Precise control of J_(eff) = 1/2 magnetic properties in Sr_2IrO_4 epitaxial thin films by variation of strain and thin film thickness

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