Directional electron filtering at a superconductor-semiconductor interface

Daniel Breunig; Song-Bo Zhang; Bjoern Trauzettel; T. M. Klapwijk

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Directional electron filtering at a superconductor-semiconductor interface

机译：超导体半导体接口处的定向电子滤波

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We evaluate the microscopically relevant parameters for electrical transport of hybrid superconductor-semiconductor interfaces. In contrast to the commonly used geometrically constricted metallic systems, we focus on materials with dissimilar electronic properties like low-carrier density semiconductors combined with superconductors, without imposing geometric confinement. We find an intrinsic mode-selectivity, a directional momentum-filter, due to the differences in electronic band structure, which creates a separation of electron reservoirs each at the opposite sides of the semiconductor, while at the same time selecting modes propagating almost perpendicular to the interface. The electronic separation coexists with a transport current dominated by Andreev reflection and low elastic backscattering, both dependent on the gate-controllable electronic properties of the semiconductor.

机译：我们评估混合超导体 - 半导体接口的电气传输的显微相关参数。与常用的几何收缩金属系统相比，我们专注于具有不同电子特性的材料，如低载波密度半导体与超导体结合，而不会施加几何限制。我们发现一个内在模式选择性，是由于电子频带结构的差异的定向动量滤波器，这在半导体的相对侧产生了各自的电子储存器的分离，同时选择几乎垂直于传播的模式界面。电子分离与由AndreeV反射和低弹性反向散射的运输电流共存，这两者都是取决于半导体的栅极可控电子特性。

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《Physical review.B.Condensed matter and materials physics》 |2021年第16期|165414.1-165414.8|共8页
作者
Daniel Breunig; Song-Bo Zhang; Bjoern Trauzettel; T. M. Klapwijk;
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Institut fuer Theoretische Physik und Astrophysik Universitaet Wuerzburg Am Hubland D-97074 Wuerzburg Germany;

Institut fuer Theoretische Physik und Astrophysik Universitaet Wuerzburg Am Hubland D-97074 Wuerzburg Germany;

Institut fuer Theoretische Physik und Astrophysik Universitaet Wuerzburg Am Hubland D-97074 Wuerzburg Germany Wuerzburg-Dresden Cluster of Excellence ct.qmat Germany;

Kavli Institute of NanoScience Faculty of Applied Sciences Delft University of Technology Lorentzweg 1 2628 CJ Delft The Netherlands Physikalisches Institut Universitaet Wuerzburg Am Hubland D-97074 Wuerzburg Germany Wuerzburg-Dresden Cluster of Excellence ct.qmat Germany;

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1. A multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems [J] . Harada N., Watanabe A. IEEE Journal of Solid-State Circuits . 2000,第1期

机译：使用77-K差分单片HEMT放大器和4.2-K JJ高压驱动器的超千兆赫瑟夫森-半导体接口电路，用于超导体-半导体电子混合系统
2. A multigigahertz Josephson-semiconductor interface circuit using77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltagedriver for superconductor-semiconductor electronic hybrid systems [J] . Harada N., Watanabe A., Awano Y., IEEE Journal of Solid-State Circuits . 2000,第1期

机译：使用77K差分单片HEMT放大器和4.2K JJ高压驱动器的超千兆赫瑟夫森半导体接口电路，用于超导体-半导体电子混合系统
3. Investigation of the structure and composition of a {111} incoherent Zr/ZrN interface containing ledges by high-resolution transmission electron microscopy, image simulation, electron energy-loss spectroscopy, energy-filtering transmission electron microscopy, and near-coincidence-site analysis [J] . P. Li, J. M. Howe, W. T. Reynolds Jr. Metallurgical and Materials Transactions A . 2006,第3期

机译：高分辨率透射电子显微镜，图像模拟，电子能量损失谱，能量过滤透射电子显微镜和近符合现场分析法研究包含壁架的{111}非相干Zr / ZrN界面的结构和组成
4. Design of Omni-Directional Reflector Using 1D Superconductor-Semiconductor Photonic Crystal [C] . Vinay Kumar, Vipin Kumar, Pawan Kumar, RAM 2013 . 2013

机译：使用1D超导体半导体光子晶体设计全向反射器
5. The directional filter bank: A multirate filter bank for the directional decomposition of images. [D] . Bamberger, Roberto Hugo. 1990

机译：定向滤波器组：用于图像定向分解的多速率滤波器组。
6. Quality improvement of OCT angiograms with elliptical directional filtering [O] . Michał Chlebiej, Iwona Gorczynska, Andrzej Rutkowski, 2019

机译：椭圆方向滤波改善OCT血管造影的质量
7. Excess conductance of superconductor-semiconductor interfaces due to phase conjugation between electrons and holes [O] . Wees B.J. van, de Vries Pedro, Magnée P., 1992

机译：由于电子和空穴之间的相位共轭，超导体-半导体界面的电导过多

Directional electron filtering at a superconductor-semiconductor interface

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