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首页> 外文期刊>Power Electronics, IET >Physics-based insulated-gate bipolar transistor model with input capacitance correction
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Physics-based insulated-gate bipolar transistor model with input capacitance correction

机译：具有输入电容校正的基于物理的绝缘栅双极晶体管模型

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摘要

Insulated-gate bipolar transistor (IGBT) terminal capacitances play an important role in IGBT switching transients. The terminal capacitance modelling is a difficult task because of their operating-point-dependent characteristics. In particular, the input capacitance needs careful treatment if accurate modelling is to be performed. Previously, for the planar gate IGBT, the Miller capacitance's voltage dependency is modelled by considering the depletion region growth pattern. For modern trench gate designs, however, there is no similar dynamic model available. Also, its current dependency needs to be accounted for. This study presents an improved IGBT physics-based model with input capacitance correction. By comparison of experimental and simulation results, the proposed model works well for different types of IGBTs (including the state-of-art trench-gate field-stop type) over a wide range of operating conditions and is convenient to implement.
机译：绝缘栅双极晶体管（IGBT）端子电容在IGBT开关瞬变中起重要作用。端子电容建模是一项艰巨的任务，因为它们依赖于工作点的特性。特别是，如果要执行精确建模，则需要仔细处理输入电容。以前，对于平面栅极IGBT，通过考虑耗尽区的增长模式来对米勒电容的电压依赖性进行建模。但是，对于现代沟槽门设计，没有类似的动态模型可用。另外，需要考虑其当前依赖性。这项研究提出了一种具有输入电容校正的改进的基于IGBT物理的模型。通过实验和仿真结果的比较，所提出的模型在广泛的工作条件下适用于不同类型的IGBT（包括最新的沟槽栅场停止型），并且易于实现。

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